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This paper proposes an experimental study of temperature effects on Gallium Nitride (GaN) High Electron Mobility Transistors (HEMTs). The output and transfer characteristics are monitored at temperatures ranging from 5°C to 105°C. The temperature dependency on static parameters of GaN HEMT is examined, such as: drain current (IDS), on-state resistance (RDS(ON)), transconductance (gm), threshold voltage (VTH) and the gate leakage current (IGSS). The decreases of IDS and gm accompanied with the increase of RDS(ON) and IGSS when increasing temperature have been observed. Moreover, the decrease in electron mobility with increasing temperatures is considered to be one of the causes of the reduction in the drain current and transconductance. In order to study the impact of temperature on power converters with GaN HEMTs by simulation approach, the thermal characteristics of a 650V, 30A GaN HEMT have been modelled. The used model is a nonsegmented Electro-thermal SPICE model of Motorola. The model parameters are extracted using Levenberg-Marquardt Algorithm.

This paper proposes a methodology to study the reliability and failure analysis of new technologies of power transistors. The use of wide gap materials such as Silicon Carbide (SiC) and Gallium Nitride (GaN) is now a good alternative to meet the integration requirements of energy conversion systems. However, the reliability of these components is a crucial issue. Aging in operating conditions is considered, associated with electrical measurements to highlight nondestructive degradations of the performance of studied transistors. A step of looking for failure mechanisms in the material is made in order to identify any physical degradation. The information collected provide the user with valuable data and help to make an optimum choice of the component which can be integrated into the equipment. The presented work proposes the description of a methodology that meets these requirements and shows the study of two technologies of power transistors used in new generations of power converters.

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