Modeling of time dependence of hole current and prediction of QBD and tBD for thin gate MOS devices based upon anode hole injection

Investigation of the effects of constant voltage stress on thin SiO2 layers using dynamic measurement protocols

“…3) could then be related to a modification of the potential barrier due to positive local (and not global) charging towards the cathode (back gate), provoking an increase of the transmission coefficient. This issue, which will be investigated in the next section, has rarely been addressed in the literature so far [5]. The gate current of Fig.…”

“…Oxide degradation at medium to high electric fields has often been partly attributed to the charging of the oxide resulting from anode hole injection (AHI) [2][3][4][5][6][7]. Tunnel electrons gain considerable energy during their transit in the oxide's conduction band before reaching the anode where impact ionization occurs.…”

Reliability of ALD Hf1-XZrxO2 Deposited by Intermediate Annealing or Intermediate Plasma Treatment

“…When high negative stress is applied (gate injection) neutral trap and positive charge generation was also observed in the bulk high- oxide (22)(23). In addition, there are several reports (35)(36)(37)(38)(39)(40) on dielectric degradation caused by anode (substrate) hole injection. Electrons tunneling through an oxide can gain considerable energy and cause impact ionization in the anode resulting in positive species (holes or hydrogenrelated ions).…”

Phenomenological modelling of non-volatile memory threshold voltage shift induced by nonlinear ionization with a femtosecond laser

“…Moreover, carriers created by two-photon ionization, which remains the main electron generation process at 1300 nm in silicon in the femtosecond regime, can subsequently absorb additional photons via an inverse Bremsstrahlung process 29,30 as long as the laser field is present (during the pulse). This should result in generally more ‘heated’ energy distributions for the carriers, and thus a higher tunneling probability as the transmission coefficient for both electrons and holes can be expressed, thanks to the commonly used Wentzel–Kramers–Brillouin (WKB) approximation, as 31–34 :where and ϕ e , h are respectively the SiO 2 effective mass and the Si-SiO 2 barrier height for electrons and holes tunneling through the oxide, E ox is the norm of the oxide electric field, and ε the free-carrier energy with respect to the bottom of the conduction band (electrons) or the top of the valence band (holes). According to its energy, a laser-generated carrier will either face a triangular or trapezoidal barrier, as seen in Fig.…”