Modeling on the temperature dependence of the magnetic susceptibility and electrical conductivity oscillations in narrow-gap semiconductors

Abstract

Electrical conductivity oscillations, magnetic susceptibility oscillations and electronic heat capacity oscillations for narrow-gap electronic semiconductors are considered at different temperatures. A theory is constructed of the temperature dependence of quantum oscillation phenomena in narrow-gap electronic semiconductors, taking into account the thermal smearing of Landau levels. Oscillations of longitudinal electrical conductivity in narrow-gap electronic semiconductors at various temperatures are studied. An integral expression is obtained for the longitudinal conductivity in narrow-gap electronic semiconductors, taking into account the diffuse broadening of the Landau levels. A formula is obtained for the dependence of the oscillations of longitudinal electrical conductivity on the bandgap of narrow-gap semiconductors. The theory is compared with the experimental results of [Formula: see text]. A theory is constructed of the temperature dependence of the magnetic susceptibility oscillations for narrow-gap electronic semiconductors. Using these oscillations of magnetic susceptibility, the cyclotron effective masses of electrons are determined. The calculation results are compared with experimental data. The proposed model explains the experimental results in [Formula: see text] at different temperatures.

Influence temperature and strong magnetic field on oscillations of density of energy states in heterostructures with quantum wells Hgcdte/Cdhgte

“…In three-dimensional and two-dimensional electron gases, a change in the energy spectrum of charge carriers leads to a change in the oscillation of the density of states in a quantizing magnetic field. In works [14,15], an analytical expression was derived for oscillating the density of states in three-dimensional electron gases in the presence of a quantizing magnetic field with a nonparabolic dispersion law. The temperature dependence of the oscillations of the density of energy states in a strong transverse magnetic field was discussed there.…”

“…Let us now consider the temperature dependence of the oscillations of the density of states in low-dimensional solids under the action of a transverse quantizing magnetic field. As is known, the effect of temperature on the Landau levels can be described by expanding the oscillations of the density of energy states into a series in terms of delta-shaped functions [14][15][16]. The study of the oscillations of the density of energy states using the series expansion in terms of delta-shaped functions made it possible to explain the temperature dependence of discrete Landau levels in two-dimensional semiconductor materials.…”

Density functional theory study of the VmN2On (m,n = 1,2) complexes in silicon

“…The present transferable methodology aiming to understand nitrogenvacancy complexes in Si will be of interest to related defect issues in other semiconductor systems. 48,49…”

Modeling the Temperature Dependence of Shubnikov-De Haas Oscillations in Light-Induced Nanostructured Semiconductors

“…In works [21][22][23], the effect of temperature dependence of magnetoresistance oscillations, magnetic susceptibility oscillations, and quantum Hall effects in bulk and nano-scale semiconductor structures on external factors was investigated. In particular, a theory was developed based on the exact mathematical model of experimental results of quantum oscillation effects for bulk semiconductor materials as a function of temperature [24][25][26]. However, the effect of light on magnetoresistance oscillations for materials with quantum well heterostructures has not been studied in these works.…”