No abstract

Electrical conductivity oscillations, magnetic susceptibility oscillations and electronic heat capacity oscillations for narrow-gap electronic semiconductors are considered at different temperatures. A theory is constructed of the temperature dependence of quantum oscillation phenomena in narrow-gap electronic semiconductors, taking into account the thermal smearing of Landau levels. Oscillations of longitudinal electrical conductivity in narrow-gap electronic semiconductors at various temperatures are studied. An integral expression is obtained for the longitudinal conductivity in narrow-gap electronic semiconductors, taking into account the diffuse broadening of the Landau levels. A formula is obtained for the dependence of the oscillations of longitudinal electrical conductivity on the bandgap of narrow-gap semiconductors. The theory is compared with the experimental results of [Formula: see text]. A theory is constructed of the temperature dependence of the magnetic susceptibility oscillations for narrow-gap electronic semiconductors. Using these oscillations of magnetic susceptibility, the cyclotron effective masses of electrons are determined. The calculation results are compared with experimental data. The proposed model explains the experimental results in [Formula: see text] at different temperatures.

This article investigated the effects of a quantizing magnetic field and temperature on Fermi energy oscillations in nanoscale semiconductor materials. It is shown that the Fermi energy of a nanoscale semiconductor material in a quantizing magnetic field is quantized. The distribution of the Fermi–Dirac function is calculated in low-dimensional semiconductors at weak magnetic fields and high temperatures. The proposed theory explains the experimental results in two-dimensional semiconductor structures with a parabolic dispersion law.

A theory is constructed of the temperature dependence of quantum oscillation phenomena in narrow-gap electronic semiconductors, taking into account the thermal smearing of Landau levels. Oscillations of longitudinal electrical conductivity in narrow-gap electronic semiconductors at various temperatures are studied. An integral expression is obtained for the longitudinal conductivity in narrow-gap electronic semiconductors, taking into account the diffuse broadening of the Landau levels. A formula is obtained for the dependence of the oscillations of longitudinal electrical conductivity on the band gap of narrow-gap semiconductors. The calculation results are compared with experimental data.

In this work, a new model has been developed for calculating the effect of a quantizing magnetic field on the temperature dependence of the two-dimensional combined density of states in direct-gap heterostructures with quantum wells. The temperature dependence of the oscillations of the two-dimensional combined density of states of the quantum well is explained by the thermal smearing of the Gaussian distribution function in a strong magnetic field. Based on the proposed new models, the Landau levels of charge carriers in a direct-gap quantum well are determined in a wide temperature range. The experimental results were interpreted using the oscillations of the combined density of states of the quantum well in a quantizing magnetic field.