Modeling the temperature dependence of the density oscillation of energy states in two-dimensional electronic gases under the impact of a longitudinal and transversal quantum magnetic fields

Rakhimov, R. G.; Sayidov, N. A.; Mirzaev, J. I.

doi:10.1007/s12648-022-02435-8

Cited by 12 publications

(6 citation statements)

References 20 publications

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“…3 provides an obvious illustration on the relation between the magnetic intensity and the heat capacity of InAs at constant temperature. It describes the heat capacity's oscillatory behavior with a presented of shape U width [20,21].…”

Section: Results and Outcomes:-mentioning

confidence: 99%

Theoretical Study of Thermodynamics Properties of Landau Levels in Inas Two-Dimensional Electron Gas

Bouzgarrou,

Ali Almudhyan

2023

IJAR

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This study theoretically analyzes the two-dimensional electron gas (2DEG) of InAs in the matter of thermodynamics proprieties and the effects of the magnetic field, Landau levels, and temperature on its corresponding behavior. InAs is a combination of two groups of semiconductors (III and V groups) which require chemical reaction to process the binding between these two and emphasize the importance of investigating and calculating the chemical potential and the required magnetization amount. The electron of a Two-Dimensional Gas Electron (2DEG) can move freely in two dimensions which creates the third direction motion by different quantized energy levels. This study will emphasize the thermodynamic properties of InAs and provide a suitable calculation to identify its behavior regarding heat capacity, chemical potential, and other factors. This behavior leads to the use InAs in the production of diode laser.

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Section: Results and Outcomes:-mentioning

confidence: 99%

Theoretical Study of Thermodynamics Properties of Landau Levels in Inas Two-Dimensional Electron Gas

Bouzgarrou,

Ali Almudhyan

2023

IJAR

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“…In our previous works [36][37][38][39][40][41][42][43], a new mathematical model was proposed that determines the temperature dependence of the first-order differential transverse magnetoresistance for magnetic field induction for small-scale semiconductor structures. In these works, the temperature dependence of ( ) 12), the Fermi level for small-scale p-type semiconductor structures is strongly dependent on the thickness of the quantum well, magnetic field induction, temperature, and the frequency of the light particle-photon.…”

Section: Calculation Of the Influence Of Light On Fermi Level Oscilla...mentioning

confidence: 99%

Modeling the Temperature Dependence of Shubnikov-De Haas Oscillations in Light-Induced Nanostructured Semiconductors

Erkaboev,

Rakhimov,

Mirzaev

et al. 2024

East Eur. J. Phys.

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In this work, the influence of light on the temperature dependence of transverse magnetoresistance oscillations is studied. A generalized mathematical expression that calculates the temperature and light dependence of the quasi-Fermi levels of small-scale p-type semiconductor structures in a quantizing magnetic field is derived. New analytical expressions have been found to represent the temperature dependence of transverse differential magnetoresistance oscillations in dark and light situations, taking into account the effect of light on the oscillations of the Fermi energy of small-scale semiconductor structures. A mathematical model has been developed that determines the light dependence of the second-order derivative of the transverse magnetoresistance oscillations of p‑type semiconductors with quantum wells by magnetic field induction. A new theory is proposed, which explains the reasons for the significant shift of the differential magnetoresistance oscillations along the vertical axis measured in the experiment for dark and light conditions.

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“…Figure 4 shows a plot of the DOS of 2DEG in GaAs as a function of electron energy E, calculated for a magnetic field B varying between 0.2T and 10T and for three different broadenings. The sharp peaks of the LLs begin to smooth out as the magnetic field increases [27,31]. We can also assume that the magnetic field is large enough to neglect the mixing of LLs due to disorder.…”

Section: Figure1mentioning

confidence: 99%

Temperature and magnetic field effect on the thermodynamic properties of 2DEG

Bouzgarrou

Almutairi

2023

Preprint

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A numerical calculation of the temperature and magnetic field dependence of the specific heat capacity, the magnetization, and the chemical potential is carried out. Of particular interest are the properties of the energy of a magnetic field in a two-dimensional electron gas exposed to a magnetic field. Thus, in this paper, we illustrate the effect of temperature on the oscillation dHvA of specific heat capacity and magnetization. As well a mathematical model has been developed for calculating the temperature dependence of the oscillations of the chemical potential and the density of states under the influence of a magnetic field. Using the proposed model, the results were explained at different broadening factors Γ. The calculated results show that specific heat capacity and magnetization increase as the magnetic field increases. Additionally, these increases carry out that the magnetic field is large enough to neglect the mixing of Landau levels caused by the sharp peak of Landeau levels. Moreover, the 2D dHvA effect is characterized by a sawtooth strap at a very low temperature.

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Modeling the temperature dependence of the density oscillation of energy states in two-dimensional electronic gases under the impact of a longitudinal and transversal quantum magnetic fields

Cited by 12 publications

References 20 publications

Theoretical Study of Thermodynamics Properties of Landau Levels in Inas Two-Dimensional Electron Gas

Theoretical Study of Thermodynamics Properties of Landau Levels in Inas Two-Dimensional Electron Gas

Modeling the Temperature Dependence of Shubnikov-De Haas Oscillations in Light-Induced Nanostructured Semiconductors

Temperature and magnetic field effect on the thermodynamic properties of 2DEG

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