Modeling random telegraph noise under switched bias conditions using cyclostationary rts noise

Abstract

In this paper, we present measurements and simulation of random telegraph signal (RTS) noise in n-channel MOS-FETs under periodic large signal gate-source excitation (switched bias conditions). This is particularly relevant to analog CMOS circuit design where large signal swings occur and where LF noise is often a limiting factor in the performance of the circuit. Measurements show that, compared to steady-state bias conditions, RTS noise can decrease but also increase when the device is subjected to switched bias conditions. We show that the simple model of a stationary noise generating process whose output is modulated by the bias voltage is not sufficient to explain the switched bias measurement results. Rather, we propose a model based on cyclostationary RTS noise generation. Using our model, we can correctly model a variety of different types of LF noise behavior that different MOS-FETs exhibit under switched bias conditions. We show that the measurement results can be explained using realistic values for the bias dependency of and .

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