Modeling the effect of deep impurity ionization on GaAs photoconductive switches

Yee, Jick H.; Khanaka, G.H.; Druce, Robert; Pocha, M.D.

doi:10.1117/12.59054

Cited by 6 publications

(2 citation statements)

References 0 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…the hole density p = J f(E, EF)D(E)de, (4) and the ionized donor density N- p-n+N=O (6) This assumption of local charge neutrality leads to a constant electric field F = V/L in which V is the applied voltage and L is the contact spacing.…”

Section: Theorymentioning

confidence: 99%

<title>Thermal ionization model for the sustaining phase of lock-on in GaAs</title>

Hjalmarson¹,

Zutavern²,

Loubriel³

et al. 1993

SPIE Proceedings

View full text Add to dashboard Cite

Thermal ionization of electrons and holes is proposed as an explanation for the sustained phase of lock-on in semi-insulating GaAs. In this mechanism, thermal ionization leads to a current instability which drives the formation of current filaments. The model predicts bistable states: either a highly conductive on-state or weakly conductive off-state. The model predicts that a transition from the off-state to a filamentary-current on-state can be triggered by illumination in agreement with experiments using photoexcitation.

show abstract

Section: Theorymentioning

confidence: 99%

<title>Thermal ionization model for the sustaining phase of lock-on in GaAs</title>

Hjalmarson¹,

Zutavern²,

Loubriel³

et al. 1993

SPIE Proceedings

View full text Add to dashboard Cite

show abstract

“…Meanwhile, theoretical studies on the switching mechanism of GaAs PCSS have also been reported during past years [21][22][23][24][25]. One of the significant theories is the physics of multiple avalanche domains.…”

Section: Introductionmentioning

confidence: 99%

Research on the thermal failure mechanism of an opposed-contact gallium arsenide photoconductive semiconductor switch in avalanche mode

Sun¹,

Hu²,

Zhu³

et al. 2022

J. Phys. D: Appl. Phys.

View full text Add to dashboard Cite

The switching mechanism and the thermal process of Gallium Arsenide (GaAs) photoconductive semiconductor switch (PCSS) with opposed-contact is investigated by numerical simulation of the two-dimensional (2D) structure using temperature-dependent physical parameters of the carriers in GaAs. Triggered by a low-energy laser pulse, the PCSS switches on due to the formation and evolution of multiple powerful avalanche domains. The 2D evolving characteristics of avalanche domains on the two sides of photogenerated plasma during the switching transient are comparatively analyzed. It is found that the ionizing center of each domain moves with the drift of accumulated electrons inside the domain. Meanwhile, the evolution of avalanche domains causes obvious thermal effect along the drift path of ionizing centers during the switch-on stage of PCSS. Then the temperature still keeps increasing at the edge of anode and cathode although the switching current starts dropping after the conduction of PCSS, and finally peaks at ~491 K and ~541 K, respectively. The simulation results indicate that the 2D filamentary current flows along the drift path of ionizing centres inside avalanche domains, which finally leads to the filamentary erosion after continuous operation of PCSS. On the basis of numerical simulation, the experiment of opposed-contact GaAs PCSS with 2.5-mm gap at the bias field of ~90 kV/cm is performed. The thermal erosion is found to initially accumulate at the edge of electrodes and then spreads along the current channel into GaAs substrate, which is in accordance with the simulation results and analysis.

show abstract

Effect of Deep Level Impact Ionization on Avalanche Breakdown in Semiconductor p-n Junctions

Kang

Myles

2000

phys. stat. sol. (a)

View full text Add to dashboard Cite

Using a simple model, we have investigated the effect of deep level impact ionization on avalanche breakdown in GaAs, InP, and Si p±n junctions. The ionization coefficients are obtained using Robbins' formalism [phys. stat. sol. (b) 97, 9 (1980)]. Results are presented for trends in the dependence of the breakdown voltage and electric field on the doping densities and on the deep level density and energy. Our results show that, for fixed doping densities, the breakdown voltage and field both decrease with increasing deep level density. Further, we find that their sensitivity to the deep level density is much stronger for levels deep within the bandgap than for those near a band edge, correlating with the decreased ionization threshold energy for shallower levels. We also find that the breakdown voltage and critical field in Si p±n junctions are stronger functions of the deep level density and energy than in GaAs and InP junctions.

show abstract

Modeling the effect of deep impurity ionization on GaAs photoconductive switches

Cited by 6 publications

References 0 publications

<title>Thermal ionization model for the sustaining phase of lock-on in GaAs</title>

<title>Thermal ionization model for the sustaining phase of lock-on in GaAs</title>

Research on the thermal failure mechanism of an opposed-contact gallium arsenide photoconductive semiconductor switch in avalanche mode

Effect of Deep Level Impact Ionization on Avalanche Breakdown in Semiconductor p-n Junctions

Contact Info

Product

Resources

About