Modeling the effects of applied stress and wafer orientation in silicon devices: from long channel mobility physics to short channel performance

Kotlyar, R.; Giles, M.D.; Cea, S.; Linton, T.; Shifren, L.; Weber, C.; Stettler, M.

doi:10.1007/s10825-009-0288-9

Cited by 11 publications

(5 citation statements)

References 33 publications

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“…the masses similarly are not affected. Similar calculations for the valence band structure in the presence of the uniaxial strain along [110] have been done by Shifren et al [86], Wang et al [87], and Kotlyar et al [88], among others.…”

Section: Compressive Strainsupporting

confidence: 71%

A review of quantum transport in field-effect transistors

Ferry

Weinbub

Nedjalkov

et al. 2022

Semicond. Sci. Technol.

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Confinement in small structures has required quantum mechanics, which has been known for a great many years. This leads to quantum transport. The field-effect transistor has had no need to be described by quantum transport over most of the century for which it has existed. But, this has changed in the past few decades, as modern versions tend to be absolutely controlled by quantum confinement and the resulting modifications to the normal classical descriptions. In addition, correlation and confinement lead to a need for describing the transport by quantum methods as well. In this review, we describe the quantum effects and the method of treating by various approaches to quantum transport.

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Section: Compressive Strainsupporting

confidence: 71%

A review of quantum transport in field-effect transistors

Ferry

Weinbub

Nedjalkov

et al. 2022

Semicond. Sci. Technol.

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“…We use the approximations of an unscreened surface roughness potential and include the Prange-Nee term. 18 Generalizing the results of Refs. 3 and 4 to the tight-binding model, we write the matrix element as…”

Section: Methodssupporting

confidence: 69%

“…The surface roughness parameters are k ¼ 3:0 nm and D ¼ 0:65 nm, which are similar to the values used by us in the modeling of hole surface channel mobility. 18 A detailed comparison with experiments is not available at present due to a large scatter in the wire data and the presence of additional charge sources of degradation, which are not included in our model. 8,9 Surface roughness scattering dominates in small wires at low gate bias.…”

Section: Resultsmentioning

confidence: 99%

“…We note that under a 1D confinement or 2D transport, the warping due to stress causes the repopulation of carriers in 2D k-space to the regions perpendicular to the transport and stress direction for h110i/(100) surface channels. 18 In a wire, where the k-space is 1D, the repopulation effect due to the warping does not occur. Stress affects the hole mobility through the stress induced changes of the transport mass, the confinement masses in the wire crossection, the subband splitting, and band mixing.…”

Section: Resultsmentioning

confidence: 99%

“…We use n ¼ 2. 18,23 Taking the Fourier transform of this correlation function, we obtain for the roughness power spectrum in a wire 24…”

mentioning

confidence: 99%

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Does the low hole transport mass in 〈110〉 and 〈111〉 Si nanowires lead to mobility enhancements at high field and stress: A self-consistent tight-binding study

Kotlyar

Linton

Rios

et al. 2012

Journal of Applied Physics

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Articles you may be interested inGeometrical and band-structure effects on phonon-limited hole mobility in rectangular cross-sectional germanium nanowiresThe hole surface roughness and phonon limited mobility in the silicon h100i, h110i, and h111i square nanowires under the technologically important conditions of applied gate bias and stress are studied with the self-consistent Poisson-sp3d5s*-SO tight-binding bandstructure method. Under an applied gate field, the hole carriers in a wire undergo a volume to surface inversion transition diminishing the positive effects of the high h110i and h111i valence band nonparabolicities, which are known to lead to the large gains of the phonon limited mobility at a zero field in narrow wires. Nonetheless, the hole mobility in the unstressed wires down to the 5 nm size remains competitive or shows an enhancement at high gate field over the large wire limit. Down to the studied 3 nm sizes, the hole mobility is degraded by strong surface roughness scattering in h100i and h110i wires. The h111i channels are shown to experience less surface scattering degradation. The physics of the surface roughness scattering dependence on wafer and channel orientations in a wire is discussed. The calculated uniaxial compressive channel stress gains of the hole mobility are found to reduce in the narrow wires and at the high field. This exacerbates the stressed mobility degradation with size. Nonetheless, stress gains of a factor of 2 are obtained for h110i wires down to 3 nm size at a 5 Â 10 12 cm -2 hole inversion density per gate area. V C 2012 American Institute of Physics. [http://dx.

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2013

The Wigner Monte Carlo Method for Nanoelectronic Devices

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Modeling the effects of applied stress and wafer orientation in silicon devices: from long channel mobility physics to short channel performance

Cited by 11 publications

References 33 publications

A review of quantum transport in field-effect transistors

A review of quantum transport in field-effect transistors

Does the low hole transport mass in 〈110〉 and 〈111〉 Si nanowires lead to mobility enhancements at high field and stress: A self-consistent tight-binding study

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