Modeling the Impact of the Trench Depth on the Gate–Drain Capacitance in Power MOSFETs

Alatise, Olayiwola; Parker-Allotey, N.-A.; Jennings, Michael R.; Mawby, P.A.; Kennedy, Ian; Petkos, G.

doi:10.1109/led.2011.2159476

Cited by 10 publications

(5 citation statements)

References 5 publications

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“…where t'D is the trench depth not overlapping the p-base region, tW is the trench width, tcell is the cell In the UMOSFET structure, the gate-drain capacitance (C GD or C rss ) is the series connection between the gate oxide capacitance and the depletion capacitance. According to a previous study on the modeling of gate-drain capacitance in UMOSFET structures, the equation for C GD is as follows [39,40]:…”

Section: Terminal Capacitance Characteristicsmentioning

confidence: 99%

Numerical Simulation Analysis of Switching Characteristics in the Source-Trench MOSFET’s

Cheon

Kim

2020

Electronics

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In this paper, we compare the static and switching characteristics of the 4H-SiC conventional UMOSFET (C-UMOSFET), double trench MOSFET (DT-MOSFET) and source trench MOSFET (ST-MOSFET) through TCAD simulation. In particular, the effect of the trenched source region and the gate trench bottom P+ shielding region on the capacitance is analyzed, and the dynamic characteristics of the three structures are compared. The input capacitance is almost identical in all three structures. On the other hand, the reverse transfer capacitance of DT-MOSFET and ST-MOSFET is reduced by 44% and 24%, respectively, compared to C-UMOSFET. Since the reverse transfer capacitance of DT-MOSFET and ST-MOSFET is superior to that of C-UMOSFET, it improves high frequency figure of merit (HF-FOM: RON-SP × QGD). The HF-FOM of DT-MOSFET and ST-MOSFET is 289 mΩ∙nC, 224 mΩ∙nC, respectively, which is improved by 26% and 42% compared to C-UMOSFET. The switching speed of DT-MOSFET and ST-MOSFET are maintained at the same level as the C-UMOSFET. The switching energy loss and power loss of the DT-MOSFET and ST-MOSFET are slightly improved compared to C-UMOSFET.

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Section: Terminal Capacitance Characteristicsmentioning

confidence: 99%

Numerical Simulation Analysis of Switching Characteristics in the Source-Trench MOSFET’s

Cheon

Kim

2020

Electronics

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“…The depth of the gate in a trench MOSFET determines Q G , with Q GD being determined by how far the trench extends below the body region [34]. This requirement for a shallow trench is in direct conflict with low R DS(on) , which favours a deeper trench as evidenced in Fig.…”

Section: Q G and Q Gdmentioning

confidence: 99%

Considerations in the design of a low‐voltage power MOSFET technology

Rutter¹

2019

IET Power Electronics

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Discrete low-voltage power metal-oxide-semiconductor field effect transistors are used in a wide variety of applications with each application relying on different aspects of device behaviour. The conflicting requirements of these applications along with constraints such as legislation, industrial base, and intellectual property have resulted in a diverse array of technologies available in the market. This study outlines the many considerations that are faced when designing a highperformance silicon power MOSFET technology contrasting the trade-offs involved as factors such as on-state resistance, switching performance, reliability, and robustness in the application are optimised. 3 Intellectual property There are ∼3000 granted US patents relating to vertical doublediffused metal-oxide-semiconductor (DMOS) devices with a trench gate (classification H01 29/7813) with the number increasing at about 300 per year. In such a fiercely competitive market, protecting intellectual property is crucial. Consideration of the

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“…Several analytical capacitance models for different vertical power device structures have been reported, e.g., those for silicon D-MOSFETs, 38) silicon U-MOSFETs, [39][40][41] and SiC D-MOSFETs. 42) In those reports, however, since the C oss components of D-MOSFETs and U-MOSFETs are relatively simple, those modeling methods are not applied to complexstructured FP-MOSFETs.…”

Section: Description Of Capacitance Modelingmentioning

confidence: 99%

Structure-based capacitance modeling and power loss analysis for the latest high-performance slant field-plate trench MOSFET

Kobayashi

Sudo

Omura

2018

Jpn. J. Appl. Phys.

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Field-plate trench MOSFETs (FP-MOSFETs), with the features of ultralow on-resistance and very low gate-drain charge, are currently the mainstream of high-performance applications and their advancement is continuing as low-voltage silicon power devices. However, owing to their structure, their output capacitance (C oss ), which leads to main power loss, remains to be a problem, especially in megahertz switching. In this study, we propose a structure-based capacitance model of FP-MOSFETs for calculating power loss easily under various conditions. Appropriate equations were modeled for C oss curves as three divided components. Output charge (Q oss ) and stored energy (E oss ) that were calculated using the model corresponded well to technology computer-aided design (TCAD) simulation, and we validated the accuracy of the model quantitatively. In the power loss analysis of FP-MOSFETs, turn-off loss was sufficiently suppressed, however, mainly Q oss loss increased depending on switching frequency. This analysis reveals that Q oss may become a significant issue in next-generation high-efficiency FP-MOSFETs.

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Modeling the Impact of the Trench Depth on the Gate–Drain Capacitance in Power MOSFETs

Cited by 10 publications

References 5 publications

Numerical Simulation Analysis of Switching Characteristics in the Source-Trench MOSFET’s

Numerical Simulation Analysis of Switching Characteristics in the Source-Trench MOSFET’s

Considerations in the design of a low‐voltage power MOSFET technology

Structure-based capacitance modeling and power loss analysis for the latest high-performance slant field-plate trench MOSFET

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