Modeling Thermal CVD.

Akiyama, Yoshikatsu

doi:10.1252/jcej.35.701

Cited by 8 publications

(7 citation statements)

References 36 publications

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“…Therefore, much trial-and-error is needed to optimize empirically the growth conditions. 3 A slight change in the precursor or reactor necessitates reoptimization, which wastes a large amount of resources. To improve the present situation, it would be useful to analyze and model MOVPE process.…”

mentioning

confidence: 99%

Nonlinear Kinetics of GaAs MOVPE Examined by Selective Area Growth Technique

Song¹,

Sugiyama²,

Nakano

et al. 2007

J. Electrochem. Soc.

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Two-dimensional or three-dimensional numerical simulation on growth rate nonuniformity of selective area metallorganic vapor phase epitaxy ͑SA-MOVPE͒ in sub-millimeter scale can extract real surface kinetics, which is normally hindered by mass transport rate of film precursors. Nonlinear surface kinetics is introduced to analyze group-III precursor concentration dependency of SA-MOVPE for the first time and surface reaction rate constant ͑k s n ͒ of adsorbed species and adsorption equilibrium constant ͑K͒ are extracted from GaAs-MOVPE at 575°C. The effect of misorientation angle ͑͒ of GaAs͑100͒ substrate on these kinetic parameters was examined. It was found that k s n is about 3.4 ϫ 10 −5 mol m −2 s −1 independent of , whereas K ranged from 6.9 to 12 ϫ 10 5 m 3 mol −1 dependent on . The obtained value of k s n can be converted to lifetime of adsorbed species on GaAs surface and it is 0.3 s. This is mostly the same with gas-phase decomposition rate of trimethylgallium and supports the accuracy of our nonlinear kinetic analysis.Metallorganic vapor phase epitaxy ͑MOVPE͒ is a wellestablished growth method for the fabrication of III-V compound semiconductor materials and devices, such as laser diodes, optical switches, and optical amplifiers. 1,2 It is particularly adaptable for mass production and devices requiring large areas. The device properties can be controlled through designing the material structures in the bulk, interface, and surface. To obtain the desired material structures, and hence the desired device properties, growth process should be precisely controlled. However, MOVPE process is very complicated due to the heat and mass transfer both in the gas-phase and surface, and there are no invariable growth conditions suitable for all the reactors for required material structures. Therefore, much trial-and-error is needed to optimize empirically the growth conditions. 3 A slight change in the precursor or reactor necessitates reoptimization, which wastes a large amount of resources. To improve the present situation, it would be useful to analyze and model MOVPE process. The processes in the gas-phase of MOVPE are reasonably able to be well understood, 4,5 however the processes on the growing surface are not. 6 Therefore, investigation on the surface reaction has been one of the basic topics for MOVPE technique. 7-9 Although kinetic Monte Carlo method can be used to simulate chemical reaction paths on surface, 10 a simple experimental analytical method will save computer cost and time.Selective area growth ͑SAG͒ in MOVPE is very useful for one step fabrication of optoelectronic integrated circuits. [11][12][13][14] In SAG, the substrates are partially covered by dielectric masks such as SiO 2 or Si 3 N 4 . Because there is no growth taking place on the masks during the epitaxial growth, the reactants will be accumulated above the masks and result in higher concentration compared with the selective growth region. Lateral vapor phase diffusion from above the masks area and surface migration would be responsib...

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mentioning

confidence: 99%

Nonlinear Kinetics of GaAs MOVPE Examined by Selective Area Growth Technique

Song¹,

Sugiyama²,

Nakano

et al. 2007

J. Electrochem. Soc.

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“…TMGa may competitively adsorb on the surface to reduce the adsorption site for MMGa on the growing surface, which will cause gentler SAG profile. CH 4 and/or C 4 H 8 may also behave to reduce the surface reaction site for MMGa and result in gentler SAG profiles at the downstream of the reactor. Thus, we demonstrated that the combination of SAG (micro) and CFD (macro) analyses, i.e.…”

Section: Combination With Macro-scale Analysismentioning

confidence: 99%

“…There are no invariable growth conditions suitable for all the reactors for required material structures. Trial-and-error is always needed to optimize the growth conditions empirically [3,4], but it will waste large amount of resources. In order to improve the present situation, it would be useful to simulate and model MOVPE process.…”

Section: Introductionmentioning

confidence: 99%

Non-linear kinetic analysis on GaAs selective area MOVPE combined with macro-scale analysis to extract major reaction mechanism

Song

Im²,

Sugiyama

et al. 2007

Journal of Crystal Growth

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“…Substrate materials of semiconductor production equipment system components are commonly aluminum-based alloys or stainless steel. In fact, Y 2 O 3 coatings are applied onto these substrates [5] using coating methods that include CVD [6], plasma spray [7], and aerosol deposition [4]. These coating techniques require vacuum systems, which are expensive resources that entail great difficulty for coating large substrates.…”

Section: Introductionmentioning

confidence: 99%

Influence of Deposition Condition on Y₂O₃Coatings Produced by Pulsed Electrophoretic Deposition

Miyazaki

Ichikawa

Suzuki

et al. 2016

Advances in Materials Science and Engineering

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Y2O3nanoparticle suspension aqueous solution was prepared using citric acid. Then, Y2O3film was deposited using this solution with pulsed electrophoretic deposition (EPD). A dense Y2O3film of 25.7 μm thickness was obtained with deposition conditions of 0.5 wt% Y2O3concentration, bias voltage of 0.5 V, and bias frequency of 1 kHz. The respective resistivities of the as-deposited film and films heat-treated at 200°C and 400°C were 2.84 × 103 Ω·cm, 5.36 × 104 Ω·cm, and 2.05 × 106 Ω·cm. A 59.8 μm thick dense Y2O3film was obtained using two-step deposition with change of the bias voltage: a first step of 0.5 V and a second step of 2.0 V.

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Modeling Thermal CVD.

Cited by 8 publications

References 36 publications

Nonlinear Kinetics of GaAs MOVPE Examined by Selective Area Growth Technique

Nonlinear Kinetics of GaAs MOVPE Examined by Selective Area Growth Technique

Non-linear kinetic analysis on GaAs selective area MOVPE combined with macro-scale analysis to extract major reaction mechanism

Influence of Deposition Condition on Y₂O₃Coatings Produced by Pulsed Electrophoretic Deposition

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Modeling Thermal CVD.

Cited by 8 publications

References 36 publications

Nonlinear Kinetics of GaAs MOVPE Examined by Selective Area Growth Technique

Nonlinear Kinetics of GaAs MOVPE Examined by Selective Area Growth Technique

Non-linear kinetic analysis on GaAs selective area MOVPE combined with macro-scale analysis to extract major reaction mechanism

Influence of Deposition Condition on Y2O3Coatings Produced by Pulsed Electrophoretic Deposition

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Influence of Deposition Condition on Y₂O₃Coatings Produced by Pulsed Electrophoretic Deposition