Modeling via hole grounds in microstrip

Goldfarb, M.; Pucel, R.A.

doi:10.1109/75.91090

Cited by 219 publications

(72 citation statements)

References 4 publications

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“…Fig. 9 shows the averaged measured inductances of substrate vias at 10 GHz against the nominal aspect ratio along with the inductance predicted by [20]. The measured inductance values are tightly clustered and approach the theoretical curve.…”

Section: B Results and Discussionmentioning

confidence: 91%

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A Through-Wafer Interconnect in Silicon for RFICs

Scholvin

Alamo

2004

IEEE Trans. Electron Devices

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Abstract-In order to minimize ground inductance in RFICs, we have developed a high-aspect ratio, through-wafer interconnect (or substrate via) in silicon that features a silicon nitride barrier liner and completely filled Cu core. We have fabricated vias with a nominal aspect ratio of 30 and verified the integrity of the insulating liner in vias with an aspect ratio of eight. The inductance of vias with nominal aspect ratios between three and 30 approach the theoretically expected values. This interconnect technology was exploited in a novel Faraday cage structure for substrate crosstalk suppression in system-on-chip applications. The isolation structure consists of a ring of grounded vias that surrounds sensitive or noisy portions of a chip. This Faraday cage structure has shown noise suppression of 30 dB at 10 GHz and 16 dB at 50 GHz at a distance of 100 m when compared to the reference structure.Index Terms-Ground inductance, Si RF technology, substrate noise, substrate via, system-on-chip (SOC), three-dimensional interconnects, through-wafer interconnect.

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Section: B Results and Discussionmentioning

confidence: 91%

“…Substrates had a resistivity of [10][11][12][13][14][15][16][17][18][19][20] cm. In the following paragraphs, we give details about each of the key process steps in our technology.…”

Section: Fabrication Technologymentioning

confidence: 99%

A Through-Wafer Interconnect in Silicon for RFICs

Scholvin

Alamo

2004

IEEE Trans. Electron Devices

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“…The maximum lengths of these structures are less than 1/10th of the corresponding guided wavelengths of 51.18, 38.82, 29.76 and 25.11 mm at the resonant frequencies of 3.14, 4.34, 5.4 and 6.4 GHz, respectively, thus both the distributed-elements model and the lumped-elements model together should be used [38][39][40]. In the lumpedelement model, there will be capacitance formed by the shunt capacitance between the ML and the substrate, series capacitance formed between segments of the ML, inductance formed by the series inductance along the ML plus shunt inductance formed between the segments of the ML, and inductance formed by the via [41], so the models are extremely complicated [35,[42][43][44]. These models will have different resonant modes of operation.…”

Section: Discussion On Electrical Lengths Of Pcf and Dcf Mlsmentioning

confidence: 99%

Creating Band-Notched Characteristics for Compact UWB Monopole Antennas

Weng¹,

Cheung²,

Yuk³

et al. 2012

Ultra Wideband - Current Status and Future Trends

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“…This discrepancy is because the analytical method obviates, first, the microstrip tee-junction used to connect the two capacitors and to cascade the cells, and second, the via holes of the shunt capacitors. The via hole can be modeled with a resistance and a series inductance [11]. Special attention must be paid to the microstrip tee junction.…”

Section: Parasitic Effects In the Structurementioning

confidence: 99%

Artificial Transmission Line With Left/Right-Handed Behavior Based on Wire Bonded Interdigital Capacitors

Sánchez-Martínez¹,

Márquez-Segura²,

Otero³

et al. 2009

PIER B

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Abstract-A novel artificial transmission line with right/left-handed behavior is presented in this paper. The unit cell of the new artificial line consists of one series and one shunt wire bonded interdigital capacitors. When wire bonded interdigital capacitors are used, the artificial line has a wider frequency band of operation. A combined analytical-graphical design method of the proposed artificial transmission line is also presented. The method has been assessed with the help of an electromagnetic solver based on the method of moments, and experimental work.

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Modeling via hole grounds in microstrip

Cited by 219 publications

References 4 publications

A Through-Wafer Interconnect in Silicon for RFICs

A Through-Wafer Interconnect in Silicon for RFICs

Creating Band-Notched Characteristics for Compact UWB Monopole Antennas

Artificial Transmission Line With Left/Right-Handed Behavior Based on Wire Bonded Interdigital Capacitors

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