Modelling a Switching Process of IGBTs with Influence of Temperature Taken into Account

Górecki, Paweł; Górecki, Krzysztof

doi:10.3390/en12101894

Cited by 13 publications

(25 citation statements)

References 24 publications

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“…The same research gives information, according to which the maximum overloading, therefore the probable failure, occurs mostly when high current and high voltage are simultaneously applied across the device during the switch-on or switch-off periods. Additionally, the dependency of IGBTs dynamic characteristic on the temperature can be verified with modeling and simulations [12][13][14]. The proposed models have applications in converter design, mode-of-operation analysis, lifespan estimation, analysis and design of the necessary cooling system, etc.…”

Section: Introductionmentioning

confidence: 78%

A Buck-Boost Transformerless DC–DC Converter Based on IGBT Modules for Fast Charge of Electric Vehicles

et al. 2020

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A transformer-less Buck-Boost direct current–direct current (DC–DC) converter in use for the fast charge of electric vehicles, based on powerful high-voltage isolated gate bipolar transistor (IGBT) modules is analyzed, designed and experimentally verified. The main advantages of this topology are: simple structure on the converter’s power stage; a wide range of the output voltage, capable of supporting contemporary vehicles’ on-board battery packs; efficiency; and power density accepted to be high enough for such a class of hard-switched converters. A precise estimation of the loss, dissipated in the converter’s basic modes of operation Buck, Boost, and Buck-Boost is presented. The analysis shows an approach of loss minimization, based on switching frequency reduction during the Buck-Boost operation mode. Such a technique guarantees stable thermal characteristics during the entire operation, i.e., battery charge cycle. As the Buck-Boost mode takes place when Buck and Boost modes cannot support the output voltage, operating as a combination of them, it can be considered as critically dependent on the characteristics of the semiconductors. With this, the necessary duty cycle and voltage range, determined with respect to the input-output voltages and power losses, require an additional study to be conducted. Additionally, the tolerance of the applied switching frequencies for the most versatile silicon-based powerful IGBT modules is analyzed and experimentally verified. Finally, several important characteristics, such as transients during switch-on and switch-off, IGBTs’ voltage tails, critical duty cycles, etc., are depicted experimentally with oscillograms, obtained by an experimental model.

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Section: Introductionmentioning

confidence: 78%

A Buck-Boost Transformerless DC–DC Converter Based on IGBT Modules for Fast Charge of Electric Vehicles

et al. 2020

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“…Although the maximum collector conveyor for high voltage insulated gate bipolar transistor (HV-IGBT) reaches 6500 V, it cannot be integrated with some high-voltage power converters. The main issue of the serial-connected IGBTs is the voltage offset during the dynamic switching process [2]. The dynamic voltage offset methods for the serial-connected IGBTs can be categorized as passive control and active control.…”

Section: Introductionmentioning

confidence: 99%

Design new voltage balancing control series connected for HV-IGBT`s

Fahmi

Mukmin

Fang

et al. 2021

IJECE

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<span>The insulated gate bipolar transistors (IGBTs) are widely used in various applications as they require low gate drive power and gate voltage. This paper proposes an active gain circuit to maintain voltage stability of series-connected IGBTs for high voltage applications. The novel gate driver circuit with closed-loops control amplifies the gate signal while restricting the IGBT emitter voltage below a predetermined level. With the proposed circuit, serial-connected IGBTs can replace high-voltage IGBTs (HV-IGBTs) for high-voltage applications through the active control of the gate signal time delay. Closed-loop controls function is to charged current to the gate to restrict the IGBT emitter voltage to a predetermined level. This paper also presents the experiment on the gate driver capability based on a series-connected IGBTs with three IGBTs and a snubber circuit. The experimental results show a voltage offset with active control with a wide variation in load and imbalance conditions. Lastly, the experimental results are validated with the simulation results, where the simulation results agree with the experimental results.</span>

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“…SPICE contains a large number of passive and active device models. The accuracy of SPICE models for various semiconductor devices, such as MOSFET, BJT, SJT and IGBT transistors, has already been studied [13][14][15][16][17][18].…”

Section: Introductionmentioning

confidence: 99%

Modelling of Dynamic Properties of Silicon Carbide Junction Field-Effect Transistors (JFETs)

2020

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The paper deals with the problem of modelling and analyzing the dynamic properties of a Junction Field Effect Transistor (JFET) made of silicon carbide. An examination of the usefulness of the built-in JFET Simulation Program with Integrated Circuit Emphasis (SPICE) model was performed. A modified model of silicon carbide JFET was proposed to increase modelling accuracy. An evaluation of the accuracy of the modified model was performed by comparison of the measured and calculated capacitance–voltage characteristics as well as the switching characteristics of JFETs.

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Modelling a Switching Process of IGBTs with Influence of Temperature Taken into Account

Cited by 13 publications

References 24 publications

A Buck-Boost Transformerless DC–DC Converter Based on IGBT Modules for Fast Charge of Electric Vehicles

A Buck-Boost Transformerless DC–DC Converter Based on IGBT Modules for Fast Charge of Electric Vehicles

Design new voltage balancing control series connected for HV-IGBT`s

Modelling of Dynamic Properties of Silicon Carbide Junction Field-Effect Transistors (JFETs)

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