Modelling of Dynamic Properties of Silicon Carbide Junction Field-Effect Transistors (JFETs)

Bargieł, Kamil; Bisewski, D.; Zarębski, J.

doi:10.3390/en13010187

Cited by 4 publications

(3 citation statements)

References 24 publications

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“…Compared with the SiC MOSFET, SiC VJFET received a lot of attention because of its threshold voltage (V th ) stability for different temperature values, since no reliability issues appear with gate oxide on contrary to SiC MOSFETs [5][6][7]. Different structures of the SiC VJFET device have been developed and studied [16][17][18][19][20][21][22][23][24][25]. Among of them, in this paper, the SiC LC-VJFET of Figure 1 [16,20] is investigated under a physical model of the threshold voltage.…”

Section: Introductionmentioning

confidence: 99%

Temperature Dependent Analytical Model for the Threshold Voltage of the SiC VJFET with a Lateral Asymmetric Channel

2021

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The wide-bandgap (WBG) semiconductor devices for modern power electronics require intensive efforts for the analysis of the critical aspects of their operation. In recent years, silicon carbide (SiC) based field effect transistor have been extensively investigated. Motivated by the significant employment of the SiC Vertical Junction Field Effect transistors with lateral channel (LC-VJFET) in the development of high-voltage and high temperature applications, the properties of the LC-VJFET device are investigated in this work. The most important normally-ON LC-VJFET parameter is their threshold voltage (VTh), which is defined as the gate-to-source voltage necessary to block the device. The higher complexity of the blocking operation of the normally-ON device makes the accurate knowledge of the VTh as a fundamental issue. In this paper, a temperature dependent analytical model for the threshold voltage of the normally-ON LC-VJFET is developed. This analytical model is derived based on a numerical analysis of the electrical potential distribution along the asymmetrical lateral channel in the blocking operation. To validate our model, the analytical results are compared to 2D numerical simulations and experimental results for a wide temperature range.

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Section: Introductionmentioning

confidence: 99%

Temperature Dependent Analytical Model for the Threshold Voltage of the SiC VJFET with a Lateral Asymmetric Channel

2021

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“…While the power MOSFET made of silicon carbide (SiC) is currently the most popular switching power wide bandgap-based semiconductor device, the SiC bipolar junction transistor (BJT) is still an inviting counterpart dedicated to high-temperature/high-power systems, due to its particular properties, such as low specific on-resistance, a less complicated manufacture method and its being free of oxide reliability referred to the high value of the electrical field and temperature. Since the last decade, the market has been offering high voltage silicon carbide power BJTs [1][2][3][4][5].…”

Section: Introductionmentioning

confidence: 99%

Electrothermal Model of SiC Power BJT

2020

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This paper refers to the issue of modelling characteristics of SiC power bipolar junction transistor (BJT), including the self-heating phenomenon. The electrothermal model of the tested device is demonstrated and experimentally verified. The electrical model is based on the isothermal Gummel–Poon model, but several modifications were made including the improved current gain factor (β) model and the modified model of the quasi-saturation region. The accuracy of the presented model was assessed by comparison of measurement and simulation results of selected characteristics of the BT1206-AC SiC BJT manufactured by TranSiC. In this paper, a single device characterization has only been performed. The demonstrated results of research show the evident temperature impact on the transistor d.c. characteristics. A good compliance between the measured and calculated characteristics of the considered transistor is observed even in quasi-saturation mode.

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“…The disadvantages indicated above are one of the main reasons why the literature offers numerous models of power semiconductor devices for isothermal analyses, whose authors report a higher accuracy than for the models built into peripheral analysis programmes. For example, in [21], an isothermal model of the IGBT was proposed, in [22]-the SiC BJT model, and in [23], an isothermal model of the SiC JFET transistor.…”

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confidence: 99%

Methods of Fast Analysis of DC–DC Converters—A Review

Górecki

2021

Electronics

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The paper discusses the methods of fast analysis of DC–DC converters dedicated to computer programmes. Literature methods of such an analysis are presented, which enable determination of the characteristics of the considered converters in the steady state and in the transient states. The simplifications adopted at the stage of developing these methods are discussed, and their influence on the accuracy of computations is indicated. Particular attention is paid to the methods of fast analysis of DC–DC converters, taking into account thermal phenomena in semiconductor devices. The sample results of computations of the DC–DC boost type converter obtained with the use of the selected methods are presented. The scope of application of particular computation methods and their duration times are discussed. Computations were performed with the use of SPICE and PLECS.

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Modelling of Dynamic Properties of Silicon Carbide Junction Field-Effect Transistors (JFETs)

Cited by 4 publications

References 24 publications

Temperature Dependent Analytical Model for the Threshold Voltage of the SiC VJFET with a Lateral Asymmetric Channel

Temperature Dependent Analytical Model for the Threshold Voltage of the SiC VJFET with a Lateral Asymmetric Channel

Electrothermal Model of SiC Power BJT

Methods of Fast Analysis of DC–DC Converters—A Review

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