Modelling and analysis of a-SiC:H p–i–n photodetectors: Effect of hydrogen dilution on dynamic model

Loulou, M.; Abdelkrim, M.; Gharbi, R.; Fathallah, M.; Pirri, Candido Fabrizio; Tresso, Elena Maria; Tartaglia, Angelo

doi:10.1016/j.sse.2007.05.012

Cited by 4 publications

(3 citation statements)

References 12 publications

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“…The approximate solution is suitable for designers of electrical circuits and can be mainly subdivided into the separation of variables, transformation techniques (Laplace, Fourier), and concentrated electrical chargers [3][4][5][6][7][8][9][10][11][12][13][14][15]; this last type of methodology is one of the most practical, efficient, and focuses mainly on the calculation and modeling of the carriers' concentration in the N-region that allows the adequate description of the static and dynamic behavior of the semiconductor power devices.…”

Section: Introductionmentioning

confidence: 99%

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A New Approach for Approximate Solution of ADE: Physical-Based Modeling of Carriers in Doping Region

et al. 2021

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The electric behavior in semiconductor devices is the result of the electric carriers’ injection and evacuation in the low doping region, N-. The carrier’s dynamic is determined by the ambipolar diffusion equation (ADE), which involves the main physical phenomena in the low doping region. The ADE does not have a direct analytic solution since it is a spatio-temporal second-order differential equation. The numerical solution is the most used, but is inadequate to be integrated into commercial electric circuit simulators. In this paper, an empiric approximation is proposed as the solution of the ADE. The proposed solution was validated using the final equations that were implemented in a simulator; the results were compared with the experimental results in each phase, obtaining a similarity in the current waveforms. Finally, an advantage of the proposed methodology is that the final expressions obtained can be easily implemented in commercial simulators.

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Section: Introductionmentioning

confidence: 99%

“…In the literature, limited ADE solution methods based on the N-region modeling are presented. In [6][7][8][9][10][11][12][13][14][15][16][17], it is considered a discretization of the N-region, which includes the movement of the borders in space (xl and xr). In this solution, the authors used the Newton-Raphson method.…”

Section: Introductionmentioning

confidence: 99%

A New Approach for Approximate Solution of ADE: Physical-Based Modeling of Carriers in Doping Region

et al. 2021

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“…According to [12] these can be classified in two groups: functional models and analytical solutions. The proposed approaches in the last group can be subdivided into: separation of variables, transformation (Laplace, Fourier), concentrated charges and numerical solutions [13]- [16]. This type of methodology is known as a physical model.…”

Section: Introductionmentioning

confidence: 99%

Physical Modeling of SiC Power Diodes with Empirical Approximation

Hernandez

Claudio

Rodríguez

et al. 2011

Journal of Power Electronics

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This article presents the development of a model for SiC power diodes based on the physics of the semiconductor. The model is able to simulate the behavior of the dynamics of the charges in the N-region based on the stored charge inside the SiC power diode, depending on the working regime of the device (turn-on, on-state, and turn-off). The optimal individual calculation of the ambipolar diffusion length for every phase of commutation allows for solving the ambipolar diffusion equation (ADE) using a very simple approach. By means of this methodology development a set of differential equations that models the main physical phenomena associated with the semiconductor power device are obtained. The model is developed in Pspice with acceptable simulation times and without convergence problems during its implementation.

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Photovoltaics literature survey (No. 55)

Shalav

2007

Progress in Photovoltaics

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Modelling and analysis of a-SiC:H p–i–n photodetectors: Effect of hydrogen dilution on dynamic model

Cited by 4 publications

References 12 publications

A New Approach for Approximate Solution of ADE: Physical-Based Modeling of Carriers in Doping Region

A New Approach for Approximate Solution of ADE: Physical-Based Modeling of Carriers in Doping Region

Physical Modeling of SiC Power Diodes with Empirical Approximation

Photovoltaics literature survey (No. 55)

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