2007 Asia-Pacific Microwave Conference 2007
DOI: 10.1109/apmc.2007.4554633
|View full text |Cite
|
Sign up to set email alerts
|

Modification of EEHEMT1 Model for Accurate Description of GaN HEMT Output Characteristics

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
3
1
1

Citation Types

0
10
0

Year Published

2008
2008
2024
2024

Publication Types

Select...
4
2

Relationship

1
5

Authors

Journals

citations
Cited by 9 publications
(10 citation statements)
references
References 3 publications
0
10
0
Order By: Relevance
“…Compared to the lumped EEHEMT1 model included in ADS, SDD models allow modification of the model equations if necessary. However, such modifications have only been made if they lead to a significant improvement of the model quality as in case of the optimized description of the knee region of HFETs presented earlier [12]. Basis of the extraction of the model parameters are pulsed S-parameter measurements with f = 1−20 GHz and the quiescent voltages V GSQ = V DSQ = 0V .…”
Section: A Basic Mishfet-modelmentioning
confidence: 99%
“…Compared to the lumped EEHEMT1 model included in ADS, SDD models allow modification of the model equations if necessary. However, such modifications have only been made if they lead to a significant improvement of the model quality as in case of the optimized description of the knee region of HFETs presented earlier [12]. Basis of the extraction of the model parameters are pulsed S-parameter measurements with f = 1−20 GHz and the quiescent voltages V GSQ = V DSQ = 0V .…”
Section: A Basic Mishfet-modelmentioning
confidence: 99%
“…Comparing with other physical based [ 18 , 19 ] or empirical [ 16 ] compact model, the Angelov model [ 17 ] takes advantage of good convergence and much easier parameter extraction. As a result, an empirical compact modeling method [ 29 ] based on the Angelov theory was used in this work to model the drain-source current of the GaN HEMT.…”
Section: Model Descriptionmentioning
confidence: 99%
“…In the past few years, lots of work has been focused on the characterization of electrothermal [ 10 , 11 , 12 ] and trapping effects [ 13 , 14 , 15 ] in compact modeling of GaN high electron mobility transistors (HEMTs). Many compact models, such as EE_HEMT1 model [ 16 ], Angelov GaN model [ 17 ], MVSG model [ 18 ], and ASM GaN model [ 19 ], have been developed for accurate characterization of device performance. Besides the development of the core model mentioned above, other real device effect models, such as noise model [ 20 ] and gate current model [ 19 ], are also proposed to improve the core model.…”
Section: Introductionmentioning
confidence: 99%
“…The EEHEMT model, as the most used commercial model, especially for III-V HEMTs has been under investigation for many years. [19][20][21][22][23] As far as we known, due to mechanism of two-dimensional electron gas (2DEG), the carrier transport from Si-doping plane to barrier layer is associated with the gate-source voltage. As a consequence of that, the coefficient of output conductance (κ) should be regarded as a function of V gs under normal operating condition instead of a constant used in the conventional EEHEMT model.…”
Section: Introductionmentioning
confidence: 99%
“…Even though this commercial model is not as precise as the Angelov model which also takes the derivative of transconductance into account, it does make a relative progress in predicting the DC and RF characteristics compared with the conventional MESFET models. The EEHEMT model, as the most used commercial model, especially for III–V HEMTs has been under investigation for many years 19–23 . As far as we known, due to mechanism of two‐dimensional electron gas (2DEG), the carrier transport from Si‐doping plane to barrier layer is associated with the gate‐source voltage.…”
Section: Introductionmentioning
confidence: 99%