2010
DOI: 10.1088/0022-3727/43/27/275302
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Modification of GaAs surface by low-current Townsend discharge

Abstract: Abstract. Influence of stationary spatially-homogeneous Townsend discharge on the (100) surface of semi-insulating GaAs samples is studied. Samples exposed to both electrons and ions in nitrogen discharge at the current density j=60 µA/cm 2 are studied by means of X-ray photoelectron spectroscopy, ellipsometry and atomic force microscopy. It is shown that exposure to low-energy ions (< 1 eV) changes crystal structure of the semiconductor on the depth up to 10-20 nm, although the stoichiometric composition does… Show more

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Cited by 9 publications
(3 citation statements)
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“…In fact, a better pattern is obtained at U = 780 V. In the Townsend mode, large numbers of electrons are produced with the increasing voltage, as also seen in Ref. [16]. The maximum electron density is observed near the anode and it radiates the corresponding DLE in this mode.…”
Section: Resultssupporting
confidence: 65%
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“…In fact, a better pattern is obtained at U = 780 V. In the Townsend mode, large numbers of electrons are produced with the increasing voltage, as also seen in Ref. [16]. The maximum electron density is observed near the anode and it radiates the corresponding DLE in this mode.…”
Section: Resultssupporting
confidence: 65%
“…[11][12][13][14][15] In the above applications, the interactions of the materials, namely, semiconductors, metals, polymers and dielectrics with gas discharge, cause some differences in their ordinary features because of the surface modification. [16] It has also been known that any change in the emission of electron features of cathodes under the discharge may be undesirable and yield some spatio-temporal instabilities as functions of the system parameters. [16] There are two modes for the discharge, namely, Townsend and glow discharges.…”
Section: Introductionmentioning
confidence: 99%
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