Modification of Si field emitter surfaces by chemical conversion to SiC

Liu, J.; Son, U. T.; Stepanova, A.; Christensen, Kenneth J.; Wojak, G. J.; Givargizov, E. I.; Bachmann, K. J.; Hren, J. J.

doi:10.1116/1.587379

Cited by 9 publications

(3 citation statements)

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“…However, the growth of SiC on a nanometer scale Si emitter surface is especially challenging because of the 20% mismatch in lattice parameter between Si and SiC. 26 The one step fabrication technology, under consideration here, eliminates the need for any further encapsulation of the Si emitters. The process was further applied to other substrate materials such as GaAs, GaP, Al, and demonstrated similar nanotip arrays of respective materials capped under a SiC head, which will be reported separately.…”

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SiC-capped nanotip arrays for field emission with ultralow turn-on field

Das

Hwang

et al. 2003

Applied Physics Letters

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Silicon nanotips with tip diameter and height measuring 1 nm and 1 m, respectively, and density in the range of 10 9-3ϫ10 11 cm Ϫ2 , were fabricated monolithically from silicon wafers by electron cyclotron resonance plasma etching technique at a temperature of 200°C. Field emission current densities of 3.0 mA/cm 2 at an applied field of ϳ1.0 V/m was obtained from these silicon nanotips. High-resolution transmission electron microscope and Auger electron spectroscopy analyses concluded that the nanotips are composed of monolithic silicon and nanometer-size SiC cap at the top. A 0.35 V/m turn-on field to draw a 10 A/cm 2 current density was demonstrated, which is much lower than other reported materials. The excellent field emission property demonstrated by these nanotips, which were fabricated by a process integrable to the existing silicon device technology at low temperatures, is a step forward in achieving low-power field emission displays and vacuum electronic devices.

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confidence: 99%

SiC-capped nanotip arrays for field emission with ultralow turn-on field

Das

Hwang

et al. 2003

Applied Physics Letters

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“…Several approaches have been taken to improve the stability of field-emitter arrays, namely the deposition of SiC, diamond and metal coatings on the silicon surface [3][4][5]. Hard material coatings such as SiC and diamond proved effective in protecting the silicon surface from oxide formation and gas reactions, but they increased the driving voltages of the FEA.…”

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confidence: 99%

Surface application of metal silicides for improved electrical properties of field-emitter arrays

Chung

Hariz

1997

Smart Mater. Struct.

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This paper concerns the positive effects of chromium or titanium silicide coating on the electrical characteristics of micro-tips. The metal-coated silicon micro-tips were prepared by the silicidation process. The surface morphologies and electrical properties of the samples were measured and analyzed. It was found that the application of chromium silicide to silicon field emitters decreases the current fluctuation range to about 50% that of a pure silicon emitter. Both metal-silicide-coated samples exhibited high discharge resistances. In particular, the titanium-silicide-coated sample exhibited a discharge resistance up to an emission current of 30 µA, which is higher than that of the chromium-silicide-coated sample. A silicon-metal-silicide vacuum-band model is proposed to explain the electrical characteristics. The effect of stabilization can be explained in terms of reduced number of chemically active sites resulting in a silicide-protected and chemically stable layer, hence the higher electrical conductivity of the material.

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“…Diamonds as one of the broadband gap materials (such as c-BN, AlN, SiC, Al 2 O 3 and LiF, etc.) have attracted increasing attention [1][2][3][4][5][6][7][8][9][10] . All these materials have many merits such as excellent chemical, thermo stability, high melting point, thermal conductivity coefficient, small dielectric constant, high current carrier mobility ratio and high break-over voltage, especially, low electron affinity (EA).…”

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Research on the preparation of amorphous diamond nanorod arrays and their excellent field emitting properties

Yan

et al. 2006

SCI CHINA SER E

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Amorphous diamond nanorod arrays with excellent field emitting have been fabricated firstly on the AAO template by the filtered cathodic arc plasma technique. Microscopic analysis has displayed that the nanorods are very uniformly distributed, and the density is very high up to ~10 9 cm −2 . The nanorod arrays are found to have an extremely low turn-on field of 0.16 V/μm, which is lower than other reported materials, and a highemission current density of 180 mA/cm 2 under an applied field of 2 V/μm can also be obtained. Scanning electron microscopy (SEM), Fourier transform infrared spectroscopy (FTIR), and filed emitting tester are employed to characterize the nanorod arrays. The field emission mechanism of the nanorod arrays is also discussed.Keywords: amorphous diamond nanorod arrays, magnetic filtered plasma, AAO, field electron emitting.During recent years, with the rapid development of IT and micro-electrics, the ultrathin, ultra-large display screen with low power consumption, has attracted more and more attention. As the core of devices, cathode materials are made much more demands in the vacuum microelectronic technology. So the materials with low power consumption, outstanding field emission properties and extreme stability are very important. To resolve the problem, many researchers have been making efforts. Diamonds as one of the broadband gap materials (such as c-BN, AlN, SiC, Al 2 O 3 and LiF, etc.) have attracted increasing attention [1][2][3][4][5][6][7][8][9][10] . All these materials have many merits such as excellent chemical, thermo stability, high melting point, thermal conductivity coefficient, small dielectric constant, high current carrier mobility ratio and high break-over voltage, especially, low electron affinity (EA). Some of them are negative electron affinity (NEA), which avails the field electron to emit. Recently, the threshold field of 3-40 V/μm for diamond film has been obtained by using chemical vapour deposition technology in the world. Some key problems have not been solved, including the reliability, stability, and uniformity of www.scichina.com www.springerlink.com Research on preparation of amorphous diamond nanorod arrays and field emitting properties 157 electron emission, which makes diamond films not be used in commercial applications.In the last decade, the field emission characteristics of diamond-like films had received extensive interests, because it was similar to diamond and easier to be fabricated compared with diamond films. From 1997 to 1998, Robertson and his co-workers [11][12][13][14] , who compared the field emission of diamond-like films with that of diamond films, indicated that for diamond possessing the surface negative electron affinity characteristics, the emission was mainly decided by the electronic conduction properties of contacted films; and without negative electron affinity, the emission of diamond-like film was mainly decided by surface barrier. Furthermore, he indicated that the surface electron affinity mainly depended on the atom-bonding cha...

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Modification of Si field emitter surfaces by chemical conversion to SiC

Cited by 9 publications

References 0 publications

SiC-capped nanotip arrays for field emission with ultralow turn-on field

SiC-capped nanotip arrays for field emission with ultralow turn-on field

Surface application of metal silicides for improved electrical properties of field-emitter arrays

Research on the preparation of amorphous diamond nanorod arrays and their excellent field emitting properties

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