Modification of SiO through room-temperature plasma treatments, rapid thermal annealings, and laser irradiation in a nonoxidizing atmosphere

Rochet, F.; Dufour, G.; Roulet, H.; Pelloie, B.; Perrière, J.; Fogarassy, É.; Slaoui, A.; Froment, M.

doi:10.1103/physrevb.37.6468

Cited by 124 publications

(55 citation statements)

References 27 publications

Supporting

Mentioning

Contrasting

Unclassified

Order By: Relevance

“…The range of observed PLA-induced processes includes softening of phonon modes with increasing plasma density, change of bandgap width with increasing nc (non-equilibrium carrier concentration), registration of optical and electrical phenomena in semiconductors depending on nc (Ahmanov et al, 1985), etc. Spatial coherence of laser radiation used for pulse laser treatments of semiconductor materials allows creation on the surface of annealed Later, nanosecond pulsed treatments using excimer XeCl (λ = 308 nm) (Volodin et al, 1998) and ArF laser radiation (λ = 193 nm) were used to obtain silicon nanoclusters and achieve crystallisation of a-Si inclusions in SiNx and SiOx films (Rochet et al, 1988). Some of the unusual properties of such heterolayers were manifested in samples treated with ultrashort pulsed fs laser radiation (Korchagina et al, 2012).…”

Section: Laser Treatments Of Geo2 Heterolayersmentioning

confidence: 99%

GeO2 Films with Ge-Nanoclusters in Layered Compositions: Structural Modifications with Laser Pulses

Gorokhov¹,

Astankova²,

Komonov³

2012

Laser Pulses - Theory, Technology, and Applications

View full text Add to dashboard Cite

Section: Laser Treatments Of Geo2 Heterolayersmentioning

confidence: 99%

GeO2 Films with Ge-Nanoclusters in Layered Compositions: Structural Modifications with Laser Pulses

Gorokhov¹,

Astankova²,

Komonov³

2012

Laser Pulses - Theory, Technology, and Applications

View full text Add to dashboard Cite

“…This parameter gives an indication of the film quality, due to its relation with bonding disorder, porosity, stress, etc. 16,[33][34][35] Thermally grown SiO 2 presents a value of this parameter around 75 cm Ϫ1 . 36 Figures 1, 2, and 3 show these results: ͑i͒R b Ͻ0.35: For these samples, x ranged between 1.97 and 1.95 and y between 0.034 and 0.046.…”

Section: A Structural Characterizationmentioning

confidence: 99%

Bonding configuration and density of defects of SiOxHy thin films deposited by the electron cyclotron resonance plasma method

Andrés

Prado

Mártil

et al. 2003

Journal of Applied Physics

View full text Add to dashboard Cite

The composition, bonding configuration, hydrogen content, and paramagnetic defects of SiO x H y thin films were studied. Films were deposited by the electron cyclotron resonance plasma method at room temperature using SiH 4 and O 2 as precursor gases. The film composition was measured by heavy ion elastic recoil detection analysis and energy dispersive x-ray spectroscopy. Suboxide films with compositions ranging from SiO 2 to SiH 0.38 were obtained. Infrared spectroscopy showed the presence of different Si-O and Si-H vibration modes. The usual estimation of the oxygen to silicon ratio by the wave number of the Si-O-Si stretching band was not accurate for films far from stoichiometry. These off-stoichiometric films also showed a broader Si-O-Si stretching peak than the stoichiometric ones, indicating a higher bonding disorder. The position of the Si-O-Si bending and rocking modes did not depend on the film composition. On the other hand, the peak position of the Si-H modes were found strongly dependent on the Si environment. By single-wavelength ellipsometry at ϭ632.8 nm the refractive index n was found to range between 1.45 (SiO 2 ) and 2.04 (SiO 0.06 H 0.36 ). Electron spin resonance measurements showed that stoichiometric films presented the well known EЈ center ("SiϵO 3 ) with concentrations in the 10 16 -10 17 cm Ϫ3 range, while for Si-rich films (xӶ1) the Si dangling bond center (Si DB , "SiϵSi 3 ) was the only detectable defect, with concentrations in the 10 18 -10 19 cm Ϫ3 range. In near-stoichiometric films both EЈ and Si DB centers were found.

show abstract

“…5 Also, Lucovsky et al with their constraint theory deduced the necessity of this interfacial suboxide film to reach good electrical characteristics. 6,7 It is also known that during thermal anneals, SiO x :H films experiences the following network reaction: 1,8 SiO x →͑x/2͒SiO 2 ϩ͑1Ϫx/2͒Si, ͑1͒…”

Section: Introductionmentioning

confidence: 99%

Thermally induced modifications on bonding configuration and density of defects of plasma deposited SiOx:H films

Andrés

Prado

Mártil

et al. 2002

Journal of Applied Physics

View full text Add to dashboard Cite

The bonding configuration, hydrogen evolution, and defect content of rapid thermally annealed ͑RTA͒ SiO x :H films of different compositions were studied. Infrared absorption measurements showed that all the hydrogen present in the films is lost at annealing temperatures below 600°C without any change in the oxygen to silicon ratio of the films. The activation energy of the hydrogen release is in the 0.21-0.41 eV range independently of film composition, suggesting that the process occurs via network bond reactions. For annealing temperatures higher than 700°C, a change in the Si-O-Si stretching wave number from the initial unannealed value to the 1070-1080 cm Ϫ1 range was promoted, independently of the initial film composition. Electron spin resonance measurements showed that all the films contain two type of bulk paramagnetic defects: the EЈ center (•SiwO 3 ) and the silicon dangling bond center (•SiwSi 3 ). The RTA process promotes a general decrease of defect concentration for annealing temperatures below 400°C. At higher temperatures, EЈ center disappears, and the •SiwSi 3 center increases its concentration up to the 10 17 -10 18 cm Ϫ3 range. This suggests that the RTA at higher temperatures promotes the formation of a high-quality, almost defect-free, SiO 2 matrix in which highly defective Si nanocrystals are also formed, where the •SiwSi 3 centers are located.

show abstract

Modification of SiO through room-temperature plasma treatments, rapid thermal annealings, and laser irradiation in a nonoxidizing atmosphere

Cited by 124 publications

References 27 publications

GeO2 Films with Ge-Nanoclusters in Layered Compositions: Structural Modifications with Laser Pulses

GeO2 Films with Ge-Nanoclusters in Layered Compositions: Structural Modifications with Laser Pulses

Bonding configuration and density of defects of SiOxHy thin films deposited by the electron cyclotron resonance plasma method

Thermally induced modifications on bonding configuration and density of defects of plasma deposited SiOx:H films

Contact Info

Product

Resources

About