Modular Multilevel SOI-CMOS Active Gate Driver Architecture for SiC MOSFETs

Rouger, Nicolas; Barazi, Yazan; Cousineau, Marc; Richardeau, Frédéric

doi:10.1109/ispsd46842.2020.9170181

Cited by 12 publications

(3 citation statements)

References 14 publications

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“…A state-of-the-art architecture of an active gate driver for SiC MOSFET was designed by Nicholas et al 136 The design is a modular multilevel active gate driver that provides new perceptions to control the level of voltage of the SiC-MOSFETs during their switching modes. The major advantages of the architecture are to reduce the stress of detection of short-circuit and protection of the device using basic low differential voltage sub-modules, and to reduce the electric field of the gate stack on SiC, during on-state while protecting the Miller coupling.…”

Section: Architecture Of Gate Oxides On Sicmentioning

confidence: 99%

Review—Gate Oxide Thin Films Based on Silicon Carbide

Odesanya

Ahmad²,

Andriyana³

et al. 2022

ECS J. Solid State Sci. Technol.

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A comprehensive review of the features of silicon carbide (SiC) and various methods of deposition of gate oxides are presented. The SiC material, which is mostly employed as a base component in metal oxide semiconductor field effect transistors is very promising for its high voltage, high power, high temperature, and high breakdown field properties, features which have made it very attractive for use in power electronic devices over its counterparts in the field. Despite these great features, and the significant progress recorded in the past few years regarding the quality of the material, there are still some issues relating to optimization of the surface and interface processing. This review discusses the effect of surface modification and treatment as a means of enhancing the electrical performance of the SiC-based MOSFETs and identifies the challenges of controlling the density of dielectric/SiC interface trap that is needed to improve the values of mobility channels, and several oxidation techniques that could be used to surmount the structural limitations presently encountered by the SiC/silicon dioxide (SiO2). Reliability as a significant aspect of electronic structures was also discussed with emphasis on causes of their breakdown and possible solutions, especially in high thermal applications.

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Section: Architecture Of Gate Oxides On Sicmentioning

confidence: 99%

Review—Gate Oxide Thin Films Based on Silicon Carbide

Odesanya

Ahmad²,

Andriyana³

et al. 2022

ECS J. Solid State Sci. Technol.

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show abstract

“…The digital units implementing the logic processing are supplied by low voltage to reduce power dissipation, while the circuits composing the output stage are powered by high voltage to carry enough energy for loads. For communication between circuits supplied with different voltage, the level shifter becomes a critical interface in the gate driver [11,12]. In the medium/high-voltage gate driver or half-bridge gate driver, FHV-LS can transfer the control signal from low-side power rail to high-side power rail with floating-ground, sending commands to the output of gate driver.…”

Section: Introductionmentioning

confidence: 99%

A Novel Floating High-Voltage Level Shifter with Pre-Storage Technique

Yang

et al. 2022

Sensors

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This paper proposes a novel floating high-voltage level shifter (FHV-LS) with the pre-storage technique for high speed and low deviation in propagation delay. With this technology, the transmission paths from input to output are optimized, and thus the propagation delay of the proposed FHV-LS is reduced to as low as the sub-nanosecond scale. To further reduce the propagation delay, a pull-up network with regulated strength is introduced to reduce the fall time, which is a crucial part of the propagation delay. In addition, a pseudosymmetrical input pair is used to improve the symmetry of FHV-LS structurally to balance between the rising and falling propagation delays. Moreover, a start-up circuit is developed to initialize the output state of FHV-LS during the VDDH power up. The proposed FHV-LS is implemented using 0.3-µm HVCMOS technology. Post-layout simulation shows that the propagation delays and energy per transition of the proposed FHV-LS are 384 ps and 77.7 pJ @VH = 5 V, respectively. Finally, the 500-points Monte Carlo are performed to verify the performance and the stability.

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“…Over the past few decades, several approaches to quick and lossless gate-driving of MOSFET switches have been introduced [10]- [15]. Common state-of-the-art approaches include charge-pump [10] and bootstrap [11], [12] solutions. To reduce losses, [13] suggested saving the energy stored in the input capacitance of the MOSFET in an external resonant circuit.…”

mentioning

confidence: 99%

An Isolated Gate Driver for Multi-Active Bridges with Soft Switching

Grimm¹,

Kolahian²,

Wood³

et al. 2022

Preprint

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The design of gate drivers is an important topic in power converter topologies that can help reduce switching losses and increase power density. Gate driving techniques that offer zero-voltage switching and/or zero current switching have recently been successfully proposed for different modular multilevel converters such as the cascaded H bridge. Previous papers on other multilevel converters such as the multi-active bridge, however, do not sufficiently assess the topics of gate driver design for this topology. This work presents a novel isolated gate driver architecture tailored to the multi-active bridge topology. Zero voltage switching is then achieved using two multi-winding transformers. The advantages of the proposed topology are not only a reduction of switching losses but also reduced component count. The topology is evaluated on a prototype using experimental results. It was shown using simulation and experiments that the proposed topology has a high efficiency while providing compact power packaging. Especially for converters with many levels, the proposed topology is therefore advantageous compared to existing solutions.

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Modular Multilevel SOI-CMOS Active Gate Driver Architecture for SiC MOSFETs

Cited by 12 publications

References 14 publications

Review—Gate Oxide Thin Films Based on Silicon Carbide

Review—Gate Oxide Thin Films Based on Silicon Carbide

A Novel Floating High-Voltage Level Shifter with Pre-Storage Technique

An Isolated Gate Driver for Multi-Active Bridges with Soft Switching

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