Modulated S-parameter measurements for isothermal microwave device characterization

Abstract

Abslruct-The validity of extracted microwave device models is critically dependent on the completeness, accuracy, and appropriateness of the starting device characterization data. In this letter we will present a novel technique for determining the S-parameters of a device under isothermal (i.e., no heating) operation. Additionally, this technique can be applied to determining the CW S-parameters under more extreme (e.g., forward biashreakdown) operation. By pulse-biasing the device from the "OFF" to the "ON" state, while performing standard S-parameter measurements, resultant data is found to be characteristic of the weighted (by duty factor) scalar sum of the devices "ON"-state and "OFF"-state S-parameter@). We will show how these measurements can then be used to interpret the devices isothermal CW S-parameters.

Tin induced crystallisation of hydrogenated amorphous silicon thin films

“…There are several crystallisation methods for the preparation of poly-Si thin film and, for example, solid phase crystallisation, metal induced crystallisation (MIC) and metal induced lateral crystallisation, rapid thermal annealing (RTA) and excimer laser annealing crystallisation method, has been typically proposed and used. [1][2][3][4][5] Among these, the solid phase crystallisation method has been considerably interesting owing to some advantages, such as simple technology, low cost and good uniformity. This method has simultaneously shown several disadvantages, such as long process time, small grain size, the existence of many defects and high temperature for crystallisation.…”

Thin‐Film Transistors for Integrated Circuits: Fundamentals and Recent Progress

“…[77] To fabricate poly-Si films on glass and polymer substrates, which can only withstand temperatures of up to 600 °C, lowtemperature crystallization technology is essential. Solid phase crystallization (SPC), [78] metal-induced crystallization (MIC), [79] and excimer laser annealing (ELA) are the main LTPS crystallization technologies. Of these, ELA, which uses a 305 nm XeCl excimer laser to irradiate and crystallize dehydrogenated a-Si films (Figure 4e), is industry-preferred due to its minimized grain defects, catalyst contamination, and superior film compactness.…”

Crystallization of amorphous silicon beyond the crystallized polycrystalline silicon region induced by metal nickel

“…Though there have been many variations of Ni-based MIC technology, such as confining crystallization catalyst nickel to specified regions for longitudinal poly-Si grains [6][7][8] or introducing tiny amount of nickel uniformly or randomly for large domain poly-Si, [9][10][11][12] the same crystallization mechanism is involved, i.e., the formation and migration of Ni silicide at the crystallization front. [13][14][15] When there is sufficient nickel at the crystallization front, a large amount of crystallization nuclei will be formed and poly-Si grains can grow simultaneously at the same speed such that the interface between the MIC poly-Si and the uncrystallized a-Si can keep smooth, but it will become ragged if the amount of nickel at the crystallization front is insufficient.…”