Abslruct-The validity of extracted microwave device models is critically dependent on the completeness, accuracy, and appropriateness of the starting device characterization data. In this letter we will present a novel technique for determining the S-parameters of a device under isothermal (i.e., no heating) operation. Additionally, this technique can be applied to determining the CW S-parameters under more extreme (e.g., forward biashreakdown) operation. By pulse-biasing the device from the "OFF" to the "ON" state, while performing standard S-parameter measurements, resultant data is found to be characteristic of the weighted (by duty factor) scalar sum of the devices "ON"-state and "OFF"-state S-parameter@). We will show how these measurements can then be used to interpret the devices isothermal CW S-parameters.

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Doping solely during periods when growth was suspended has been used to synthesize profiles not easily achieved by conventional doping techniques. Suspension of growth under arsenic stabilized conditions allows Ge doping to produce n-type complex profiles with reduced autocompensation. At higher temperatures, autocompensation becomes apparent. Under gallium stabilized conditions, heavily autocompensated n-type layers resulted, consistent with a nonunity incorporation coefficient.

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