Modulation-Doped In<sub>0.5</sub>Al<sub>0.5</sub>P/GaAs Field-Effect Transistors

Ohba, Yasuo; Watanabe, Mutsumi; Kawasaki, H.; Kamei, K.; Nakanisi, Takatosi

doi:10.1143/jjap.27.l922

Cited by 10 publications

(2 citation statements)

References 7 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The activation energy was determined to be 54. 4 5 kJ/mol, which is the characteristic of a reaction-limited mechanism.9 Also, no trenchirig at the base of the etched features was found in this acid. This is also characteristic of a reaction-limited etch.104…”

mentioning

confidence: 85%

Wet Chemical Etch Solutions for Al x Ga1 − x P

Lee

Santana

Abernathy

et al. 1996

J. Electrochem. Soc.

View full text Add to dashboard Cite

Several wet etching solutions for AIGaP of different compositions have been studied. A105Ga05P is found to etch in HF, H3P04, hyphosphorous acid (HOPH2:O), HCI, KOH, and 1% Br2-methanol (MeOH). Etching of Al0 5Ga05P in HCI is reaction limited with an activation energy of -54.4 kJ/mol. At fixed conditions, the etch rates of AlGa1 P vary exponentially with x in HF and HCI, while in 1% Br2-MeOH and mixtures of HCI and HNO3 the etch rates follow a linear dependence on AlP mole fraction. HF has been found to be a good etchant for AIGaP over InGaP or AIInP with high selectivity, while HCI is useful for the reverse case. The use of 1% Br2-MeOH or the mixtures of HCI and HNO3 provides little selectivity between AIGaP, InGaP, AllnP, and GaAs.

show abstract

mentioning

confidence: 85%

Wet Chemical Etch Solutions for Al x Ga1 − x P

Lee

Santana

Abernathy

et al. 1996

J. Electrochem. Soc.

View full text Add to dashboard Cite

show abstract

“…The AIGalnP quaternary semiconductor system is attracting much interest for use in heterojunction bipolar transistors (HBTs), high electron mobility transistors (HEMTs), and photonic devices lattice matched to GaAs substrates. [1][2][3][4] In the fabrication of these devices, it is advantageous to have selective etches for the component ternary alloys over the underlying GaAs, and relative to each other. 5,e For example in HBT, laser or light-emitting diode fabrication it is necessary to selectively expose specific layers within the heterostructure for deposition of ohmic contacts.…”

Section: Introductionmentioning

confidence: 99%

Wet Chemical Etching of Al0.5In0.5 P

Lee

Pearton

Abernathy

et al. 1995

J. Electrochem. Soc.

View full text Add to dashboard Cite

A number of new selective wet etching solutions for AIInP over GaAs and InGaP have been investigated. We find that in addition to HCI and Br2-MeOH, the following room temperature acids also etch AIInP lattice matched to GaAs : HF, HI, H2SO4, HsPO4 and C6H807 (citric acid). Selective etching over GaAs can be obtained with HF, HI, HsPO4 and C6H807, while use of HF, HI, H2SO4, H3PO4, and CeHeO7 provides selectivity over InGaP. The etching of AIInP in HsPO4 is thermally activated, and has the form R o~ exp (-Ea/kT), where Ea = 12.03 kcal 9 moF 1, consistent with the rate-limiting step being chemical reaction at the AIInP surface.

show abstract