Modulation of physical properties of oxide thin films by multiple fields

Yang, Huali; Wang, Baomin; Zhu, Xi; Shang, Jie; Chen, Bin; Li, Run-Wei

doi:10.1088/1674-1056/25/6/067303

Cited by 4 publications

(3 citation statements)

References 315 publications

(434 reference statements)

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“…More and more devices are being paid much more attention for integrating additional functions by combining electrical signals with other signals, such as light and magnetism signals. 193,194 Nanostructured perovskite materials have excellent enhanced photoelectronic properties due to the size effect, and optoelectronic neuromorphic devices based on perovskites have been extensively studied in that the introduction of optical signals provides the device with higher bandwidth, lower power consumption, and less crosstalk. With the help of the simple hot-injection method, Han et al synthesized CsPbBr 3 QDs and utilized the QDs to fabricate a photo-synaptic device (Fig.…”

Section: Nanostructured Perovskite-based Storage and Neuromorphic Dev...mentioning

confidence: 99%

Nanostructured perovskites for nonvolatile memory devices

et al. 2022

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Section: Nanostructured Perovskite-based Storage and Neuromorphic Dev...mentioning

confidence: 99%

Nanostructured perovskites for nonvolatile memory devices

et al. 2022

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“…Besides the optical-based resistive switching memories, electrical-and magnetic-based resistive switching devices are also interesting and attractive due to their important and promising physical properties and applications [93]. Recently in our group, a nanochannel device was designed in V 2 O 5 -based selector via electric field-induced ion migration [94].…”

Section: Other Approaches For Multifunctional Resistive Switchingmentioning

confidence: 99%

Multifunctional Optoelectronic Device Based on Resistive Switching Effects

Tan¹,

Liu²,

Li³

2018

Recent Development in Optoelectronic Devices

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Optoelectronic resistive switching devices, utilizing optical and electrical hybrid methods to control the resistance states, offer several advantages of both photons and electrons for high-performance information detecting, demodulating, processing, and memorizing. In the past decades, optoelectronic resistive switching devices have been widely discussed and studied due to the potential for parallel information transmission and processing. In this chapter, recent progresses on the optoelectronic resistive switching mechanism, materials, and devices will be introduced. Then, their performance such as photoresponsivity, on/off ratio, as well as retention will be investigated. Furthermore, possible applications of the optoelectronic resistive switching considering logic, memory, neuromorphic, and image-processing devices will be summarized. In the end, the challenges and possible solutions of optoelectronic resistive switching devices for the next-generation information technology will be discussed and prospected. Recent Development in Optoelectronic Devices 28high potential for integrating processor and memory together, which eliminates the bottleneck between memory and processor in the modern von Neumann-computing architecture, thus allowing high parallel data processing [21][22][23][24][25][26]. However, the electronic memristor-based architecture still has bandwidth limitation in high-frequency data communicating between different modulators.The combination of photons and memristor-based circuits will integrate the advantages of photons in a high-speed data transmission and memristors in parallel in-memory computing and may open up a new era for future computing owing to the high bandwidth and lowpower consumption. Moreover, the optoelectronic-based memristive system will extend the application of memristor-based architecture to image or visual information processing. As shown in Figure 2, with the increasing demands of mobile computing in human daily life, wearable devices, health-care devices, and human-machine interacting devices including intelligent image sensor, video monitor, invisible touch screen, electronic eyes, wearable heart or blood monitoring and display devices, smart processor, and even brain-implantable devices will be more and more important for an efficient and comfortable way for our better life, body health, daily work, and communication [27][28][29][30][31][32]. The optoelectronic memristor-based architecture, wherein both photons and electrons are used for parallel data processing and communicating between input-output (I/O) devices and the in-memory processor, may provide such a platform for the mobile computing.In this chapter, recent developments on optoelectronic memristor materials and devices, and applications including logic, memory, memristor, and neuromorphic devices will be summarized, then their capability in future optoelectronic on-chip interconnection, in-memory computing, brain-inspired computing, and visual information processing will be evaluated. Figure 2. Possible opto...

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“…where e is the deviation vector for oxygen from the connecting line which is r ij [15,29]. The vector D vanishes when crystal possesses inversion symmetry, while in case of lack inversion symmetry, its orientation ensures that the energy is negative.…”

Section: Introductionmentioning

confidence: 99%

Peculiar magnetism in Eu substituted BiFeO₃and its correlation with local structure

Mumtaz

Jaffari

Shah

2018

J. Phys.: Condens. Matter

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We have systematically investigated the effects of Eu substitution on chemical pressure, bond lengths, microstrain, bond angles, octahedral tilting, vibrational modes and phase transformation, in BiFeO. Correlation between concentration, phase, local structure and magnetism has been explained. Substitution of Eu ions with contrasting magnetic moment and dissimilar size, affects the local structure by changing bond angles and hence modifies spin structure through weakening of Dzyaloshinsky-Moriya (DM) interaction which lead to destruction of spiral spin configuration. Intriguing as well as anomalous magnetic response such as weak ferromagnetism with high coercivity, stair step like loops with significant drop in coercivity and systematic decrease in the magnetic coercivity at low temperatures has been observed as a function of Eu concentration (x). These results are explained on the basis of weakening of DM interaction, field induced melting of antiferromagnetic clusters and modification in effective magnetic anisotropy including contribution of magnetoelectric coupling, for various values of x. These results were used to generate the magnetic phase diagram.

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Modulation of physical properties of oxide thin films by multiple fields

Cited by 4 publications

References 315 publications

Nanostructured perovskites for nonvolatile memory devices

Nanostructured perovskites for nonvolatile memory devices

Multifunctional Optoelectronic Device Based on Resistive Switching Effects

Peculiar magnetism in Eu substituted BiFeO₃and its correlation with local structure

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Modulation of physical properties of oxide thin films by multiple fields

Cited by 4 publications

References 315 publications

Nanostructured perovskites for nonvolatile memory devices

Nanostructured perovskites for nonvolatile memory devices

Multifunctional Optoelectronic Device Based on Resistive Switching Effects

Peculiar magnetism in Eu substituted BiFeO3and its correlation with local structure

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Peculiar magnetism in Eu substituted BiFeO₃and its correlation with local structure