Molecular beam epitaxial growth and characterization of InSb1 − xNx on GaAs for long wavelength infrared applications

Patra, Nimai Chand; Bharatan, Sudhakar; Li, Jia; Tilton, Michael L.; Iyer, Shanthi

doi:10.1063/1.3702453

Cited by 12 publications

(5 citation statements)

References 36 publications

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“…These experimental studies, along with qualitative analysis using an analytical relation between effective vapor composition and NW chemical composition, not only enabled better understanding on the influence of different growth parameters on NW growth but also provided insight to a two-step growth temperature process with a corresponding Ga flux variation during growth. Although a two-step growth technique is not new for thin films 24–27 and NW synthesis by chemical vapor deposition (CVD) technique 26–28 , it is not common for NWs grown by MBE 29 . It has been reported that both binary and ternary III-V NWs synthesized by two-step CVD method exhibited long, straight, limited radial growth and excellent crystallinity when compared to NWs grown at invariant growth temperature via a single-step CVD growth technique 28, 30, 31 .…”

Section: Introductionmentioning

confidence: 99%

A Two-Step Growth Pathway for High Sb Incorporation in GaAsSb Nanowires in the Telecommunication Wavelength Range

Ahmad

Karim

Hafiz

et al. 2017

Sci Rep

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Self-catalyzed growth of axial GaAs1−xSbx nanowire (NW) arrays with bandgap tuning corresponding to the telecommunication wavelength of 1.3 µm poses a challenge, as the growth mechanism for axial configuration is primarily thermodynamically driven by the vapor-liquid-solid growth process. A systematic study carried out on the effects of group V/III beam equivalent (BEP) ratios and substrate temperature (Tsub) on the chemical composition in NWs and NW density revealed the efficacy of a two-step growth temperature sequence (initiating the growth at relatively higher Tsub = 620 °C and then continuing the growth at lower Tsub) as a promising approach for obtaining high-density NWs at higher Sb compositions. The dependence of the Sb composition in the NWs on the growth parameters investigated has been explained by an analytical relationship between the effective vapor composition and NW composition using relevant kinetic parameters. A two-step growth approach along with a gradual variation in Ga-BEP for offsetting the consumption of the droplets has been explored to realize long NWs with homogeneous Sb composition up to 34 at.% and photoluminescence emission reaching 1.3 µm at room temperature.

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Section: Introductionmentioning

confidence: 99%

A Two-Step Growth Pathway for High Sb Incorporation in GaAsSb Nanowires in the Telecommunication Wavelength Range

Ahmad

Karim

Hafiz

et al. 2017

Sci Rep

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“…Dilute nitride III–V semiconductor alloys in thin films with variable bandgap have been on the extensively studied material systems [ 1 – 10 ] for optical telecommunications applications. Introduction of very low nitrogen concentrations is sufficient to modulate the band gap of such systems over a wide range.…”

Section: Introductionmentioning

confidence: 99%

Effects of Annealing on GaAs/GaAsSbN/GaAs Core-Multi-shell Nanowires

et al. 2016

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The effects of ex-situ annealing in a N2 ambient on the properties of GaAs/GaAsSbN/GaAs core-multi-shell nanowires on Si (111) substrate grown by self-catalyzed molecular beam epitaxy (MBE) are reported. As-grown nanowires exhibit band edge emission at ~0.99 eV with a shoulder peak at ~0.85 eV, identified to arise from band tail states. A large red shift of 7 cm−1 and broadened Raman spectra of as-grown nanowires compared to that of non-nitride nanowires confirmed phonon localization at N-induced localized defects. On annealing nanowires to 750 °C, there was no change in the planar defects in the nanowire with respect to the as-grown nanowire; however, vanishing of the photoluminescence (PL) peak corresponding to band tail states along with enhanced band edge PL intensity, recovery of the Raman shift and increase in the Schottky barrier height from 0.1 to 0.4 eV clearly point to the efficient annihilation of point defects in these GaAsSbN nanowires. A significant reduction in the temperature-induced energy shift in the annealed nanowires is attributed to annihilation of band tail states and weak temperature dependence of N-related localized states. The observation of room temperature PL signal in the 1.3 μm region shows that the strategy of adding small amounts of N to GaAsSb is a promising route to realization of efficient nanoscale light emitters with reduced temperature sensitivity in the telecommunication wavelength region.

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“…There are a variety of technologies for fabricating the RS layer, such as atomic layer deposition (ALD), [32] sputter, [33] pulsed layer deposition (PLD), [34] sol-gel process, [35] chemical solution deposition (CSD), [26][27][28]36] chemical vapor deposition (CVD), [37,38] e-beam evaporation deposition, [39] and molecular beam epitaxy (MBE). [40,41] Among a variety of fabricating methods, sputter, which can deposit well-controlled thin films, is most popular. CSD is a cost effective and highly flexible method that allows for good film quality at moderate annealing temperatures.…”

Section: The Memristor and Spiking Neural Network (Snn)mentioning

confidence: 99%

The Future of Memristors: Materials Engineering and Neural Networks

Sun

Chen

Yan

2020

Adv Funct Materials

274

173

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From Deep Blue to AlphaGo, artificial intelligence and machine learning are booming, and neural networks have become the hot research direction. However, due to the size limit of complementary metal–oxide–semiconductor (CMOS) transistors, von Neumann‐based computing systems are facing multiple challenges (such as memory walls). As the number of transistors required by the neural network increases, the development of neural networks based on the von Neumann computer is limited by volume and energy consumption. As the fourth basic circuit element, memristor shines in the field of neuromorphic computing. The new computer architecture based on memristor is widely considered as a substitute for the von Neumann architecture and has great potential to deal with the neural network and big data era challenge. This article reviews existing materials and structures of memristors, neurophysiological simulations based on memristors, and applications of memristor‐based neural networks. The feasibility and advancement of implementing neural networks using memristors are discussed, the difficulties that need to be overcome at this stage are put forward, and their development prospects and challenges faced are also discussed.

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Molecular beam epitaxial growth and characterization of InSb1 − xNx on GaAs for long wavelength infrared applications

Abstract: Growth of InSb epilayers and quantum wells on Ge(001) substrates by molecular beam epitaxy

Cited by 12 publications

References 36 publications

A Two-Step Growth Pathway for High Sb Incorporation in GaAsSb Nanowires in the Telecommunication Wavelength Range

A Two-Step Growth Pathway for High Sb Incorporation in GaAsSb Nanowires in the Telecommunication Wavelength Range

Effects of Annealing on GaAs/GaAsSbN/GaAs Core-Multi-shell Nanowires

The Future of Memristors: Materials Engineering and Neural Networks

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