A Two-Step Growth Pathway for High Sb Incorporation in GaAsSb Nanowires in the Telecommunication Wavelength Range

Ahmad, Estiak; Karim, Rezaul; Hafiz, Shihab Bin; Reynolds, C. L.; Liu, Yang; Iyer, Shanthi

doi:10.1038/s41598-017-09280-4

Cited by 35 publications

(43 citation statements)

References 47 publications

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“…1,2 This makes GaAsSb suitable for a variety of potential optoelectronic applications: infrared light-emitting diodes, 3 photodetectors, 4 terahertz quantum cascade lasers 5 and optical telecommunications operating at ~1.55 μm. 6 Furthermore, an increase in spin-orbit interaction due to introduction of heavy Sb atoms into GaAs induces sub-picosecond spin relaxation. This makes GaAsSb an ideal material for future ultrafast all-optical polarization switches at room temperature.…”

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confidence: 99%

Effect of exciton transfer on recombination dynamics in vertically nonuniform GaAsSb epilayers

Zhang

Qiu

Chen

et al. 2019

Applied Physics Letters

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Low-temperature photoluminescence (PL), photoreflectance (PR), and temperature dependent time-resolved PL spectroscopies are employed to investigate optical emission processes and exciton dynamics in graded GaAsSb epilayers. The nonuniformity in the Sb composition along the growth direction is disclosed from low-temperature PL and PR measurements. Furthermore, significant differences in PL dynamics are found at low temperatures for the PL emissions originating from spatial regions with the low and high Sb compositions, with a fast decay and a slow rise at the early stage of the PL transient, respectively. This finding is attributed to exciton transfer from the low Sb region to the high Sb region. The obtained results are important for a general understanding of optical transitions and exciton/carrier dynamics in material systems with graded alloy composition.

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confidence: 99%

Effect of exciton transfer on recombination dynamics in vertically nonuniform GaAsSb epilayers

Zhang

Qiu

Chen

et al. 2019

Applied Physics Letters

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“…There are already reports that describe detailed characterizations and investigation of the optical properties of GaAsSb NWs on Si substrates grown via CVD [78] and MBE. [27][28][29]52,[79][80][81][82][83][84][85][86] As mentioned earlier, the Sb content, for structures grown on Si, is kept at a relatively low level. In several cases of growth on patterned Si substrates, where VLS growth occurred, the size of the pattern plays an important role in the morphology and elemental composition of the structures.…”

Section: 13) Gaassb Nanowiresmentioning

confidence: 99%

III–V ternary nanowires on Si substrates: growth, characterization and device applications

Boras

Liu

2019

J. Semicond.

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Over the past decades, the progress in the growth of materials which can be applied to cutting-edge technologies in the field of electronics, optoelectronics and energy harvesting has been remarkable. Among the various materials, group III-V semiconductors are of particular interest and have been widely investigated due to their excellent optical properties and high carrier mobility. However, the integration of III-V structures as light sources and numerous other optical components on Si, which is the foundation for most optoelectronic and electronic integrated circuits, has been hindered by the large lattice mismatch between these compounds. This mismatch results in substantial amounts of strain and degradation of the performance of the devices. Nanowires (NWs) are unique nanostructures that induce elastic strain relaxation, allowing for the monolithic integration of III-V semiconductors on the cheap and mature Si platform. A technique that ensures flexibility and freedom in the design of NW structures is the growth of ternary III-V NWs, which offer a tuneable frame of optical characteristics, merely by adjusting their nominal composition. In this review, we will focus on the recent progress in the growth of ternary III-V NWs on Si substrates. After analysing the growth mechanisms that are being employed and describing the effect of strain in the NW growth, we will thoroughly inspect the available literature and present the growth methods, characterization and optical measurements of each of the III-V ternary alloys that have been demonstrated. The different properties and special treatments required for each of these material platforms are also discussed. Moreover, we will present the results from the works on device fabrication, including lasers, solar cells, water splitting devices, photodetectors and FETs, where ternary III-V NWs were used as building blocks. Through the current paper, we exhibit the up-to-date state in this field of research and summarize the important accomplishments of the past few years.

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“…One important class of such materials are ternary alloy nanowires, which consist of two binary semiconductors that have the same cation or anion. These NWs exhibit unique properties and can be used for specific applications such as InAs 1− x Sb x [ 2 ] and InAs 1− x P x [ 3 ] NW-based infrared photodetectors for air pollution monitoring, GaAs 1− x Sb x applications in telecommunications industry [ 4 ], GaAs 1− x P x tandem solar cells [ 5 ] and Al x Ga 1− x N nanowire-based mid-deep ultraviolet light emitting diodes [ 6 ]. Among nanowires containing different III x III 1− x V and IIIV 1− x V x materials, the composition control of In x Ga 1− x As, GaAs 1− x Sb x and InAs 1− x Sb x NWs is the best studied (more than a dozen papers for each materials system [ 1 ]).…”

Section: Introductionmentioning

confidence: 99%

Role of Thermodynamics and Kinetics in the Composition of Ternary III-V Nanowires

Leshchenko

Johansson

2020

Nanomaterials

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We explain the composition of ternary nanowires nucleating from a quaternary liquid melt. The model we derive describes the evolution of the solid composition from the nucleated-limited composition to the kinetic one. The effect of the growth temperature, group V concentration and Au/III concentration ratio on the solid-liquid dependence is studied. It has been shown that the solid composition increases with increasing temperature and Au concentration in the droplet at the fixed In/Ga concentration ratio. The model does not depend on the site of nucleation and the geometry of monolayer growth and is applicable for nucleation and growth on a facet with finite radius. The case of a steady-state (or final) solid composition is considered and discussed separately. While the nucleation-limited liquid-solid composition dependence contains the miscibility gap at relevant temperatures for growth of InxGa1−xAs NWs, the miscibility gap may be suppressed completely in the steady-state growth regime at high supersaturation. The theoretical results are compared with available experimental data via the combination of the here described solid-liquid and a simple kinetic liquid-vapor model.

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A Two-Step Growth Pathway for High Sb Incorporation in GaAsSb Nanowires in the Telecommunication Wavelength Range

Cited by 35 publications

References 47 publications

Effect of exciton transfer on recombination dynamics in vertically nonuniform GaAsSb epilayers

Effect of exciton transfer on recombination dynamics in vertically nonuniform GaAsSb epilayers

III–V ternary nanowires on Si substrates: growth, characterization and device applications

Role of Thermodynamics and Kinetics in the Composition of Ternary III-V Nanowires

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