The
nanowire geometry
is favorable for the growth of ternary semiconductor
materials, because the composition and properties can be tuned freely
without substrate lattice matching. To achieve precise control of
the composition in ternary semiconductor nanowires, a deeper understanding
of the growth is required. One unknown aspect of seeded nanowire growth
is how the composition of the catalyst nanoparticle affects the resulting
composition of the growing nanowire. We report the first
in
situ
measurements of the nanoparticle and In
x
Ga
1–
x
As nanowire
compositional relationship using an environmental transmission electron
microscopy setup. The compositions were measured and correlated during
growth, via X-ray energy dispersive spectroscopy. Contrary to predictions
from thermodynamic models, the experimental results do not show a
miscibility gap. Therefore, we construct a kinetic model that better
predicts the compositional trends by suppressing the miscibility gap.
The findings imply that compositional control of In
x
Ga
1–
x
As nanowires is possible
across the entire compositional range.