Molecular beam epitaxial growth of high quality InSb

Abstract

In this letter we report on the growth of high quality InSb by molecular beam epitaxy that has been optimized using reflection high energy electron diffraction. A 4.8 μm InSb layer grown on GaAs at a growth temperature of 395 °C and a III/V incorporation ratio of 1:1.2 had an x-ray rocking curve of 158 arcsec and a Hall mobility of 92 300 cm2 V−1 at 77 K. This is the best material quality obtained for InSb nucleated directly onto GaAs reported to date.

High-quality InSb growth by metalorganic vapor phase epitaxy

“…Electron mobility near the interface, however, is low due to the scattering by the dislocations. This is because whole electron mobility has dependence of film thickness [14]. On the other hand, it is possible that carbon impurities derived from source materials act as carrier generators in the films.…”

Structure and transport mechanisms of Si/porous Si n–p junctions prepared by liquid phase epitaxy

“…For instance, a porous silicon intermediate sacrificial layer enables epitaxial growth and an easy removal of the epilayer from the substrate by selective etching which can be re-used several times for the deposition process [16]. Epitaxial growth techniques such as molecular beam epitaxy (MBE) [17], vapor phase epitaxy (VPE) [16] and liquid phase epitaxy (LPE) [16] have been proposed to grow silicon on porous silicon substrates.…”

“…The LPE is a mature, economic, safe and simple [15][16][17][18][19]. Moreover, LPE occurs close to thermodynamic equilibrium and therefore produces high quality epitaxial layer [15].…”

Формирование низкоразмерных структур в гетеросистеме InSb/AlAs

“…• C [19]. В настоящей работе изучались гетероструктуры, фор-мирующиеся в системе InSb/AlAs в двух режимах эпитаксии, значительно различающихся длиной поверх-ностной диффузии адатомов (L d ): режим поочередного осаждения материалов In и Sb, так называемый режим атомно-слоевой эпитаксии (АСЭ), и режим одновремен-ного осаждения материалов In и Sb, т. е. традицион-ный режим МЛЭ.…”