Molecular beam epitaxial growth of BGaAs ternary compounds

Gupta, Varun; Koch, Maximilian; Watkins, Neil J.; Gao, Yongli; Wicks, G. W.

doi:10.1007/s11664-000-0123-3

Cited by 47 publications

(33 citation statements)

References 6 publications

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“…Newman [4] shows that in liquid-encapsulated Czochralski-grown BGaAs the boron atoms occupy primarily isovalent gallium lattice sites but also form antisite defects (B As ) when grown from Ga-rich melts. Gupta et al [5] find a monotonic increase (8.25 meV) of the band gap up to 0.25% boron. Between 0.25 and 1% B the gap remains constant.…”

Section: Introductionmentioning

confidence: 95%

Stability and band gaps of InGaAs, BGaAs, and BInGaAs alloys: Density‐functional supercell calculations

Jenichen¹,

Engler²

2007

Physica Status Solidi (b)

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The influence of arrangement and content of substituents (B, In) in BGaAs, InGaAs, and BInGaAs alloys on the stabilities and band gaps is investigated using density-functional supercell calculations. The stability of ternary alloys decreases from InGaAs over BGaAs to GaAsN. Typical substituent structures show the following stability order: isolated substituents -[110] chains -clusters -twisted [111] chains -(200/211) arrangements (most stable). This is valid for both the In-and B-poor as well as the In-and B-rich alloys. From the fact that grown InGaAs provides a different gap than the most stable arrangement one can conclude that other structures (isolated indium atoms or In m As clusters) are formed during the growth. Simultaneous substitutions (BInGaAs) of larger (In) and smaller (B) atoms prefer arrangements in larger distances (220) for isovalent boron substitution and in In -B bonds for antisite boron substitution. The high degree boron antisite substitution induces partially occupied acceptor bands which lead to a strong reduction of the band gap in comparison to the isovalent substitution.

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Section: Introductionmentioning

confidence: 95%

Stability and band gaps of InGaAs, BGaAs, and BInGaAs alloys: Density‐functional supercell calculations

Jenichen¹,

Engler²

2007

Physica Status Solidi (b)

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“…8,9 It would be beneficial, though, to significantly increase the boron concentration in a high quality alloy material.…”

Section: Alternative Boron Precursors For Bgaas Epitaxymentioning

confidence: 99%

Alternative boron precursors for BGaAs epitaxy

Geisz

Friedman

Kurtz

et al. 2001

Journal of Elec Materi

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“…There were few reports on BGaAs and BInGaAs alloys since the pioneering work of Geisz et al [1]. BGaAs alloy has been prepared by molecular beam epitaxy [2,3] and metalorganic vapour phase epitaxy (MOVPE) [4][5][6]. The growth of lattice-matched BInGaAs-layers on GaAs has also been studied by Gottschalch et al [4] and solar cells structure with BInGaAs as base layer have been grown and successfully tested [7].…”

Section: Introductionmentioning

confidence: 99%