Molecular beam epitaxy as a method for the growth of free-standing bulk zinc-blende GaN and AlGaN crystals

Новиков, С. В.; Staddon, C. R.; Foxon, C. T.; Luckert, F.; Edwards, P. R.; Martin, Robert; Kent, A. J.

doi:10.1016/j.jcrysgro.2010.10.125

Cited by 8 publications

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“…It is well known that a deliberate use of As flux as a surfactant can encourage the cubic phase of GaN to be produced [18] and can reduce the formation of voids if grown on GaAs. This way of having cubic seeds, combined with the further removal of the substrate, is nowadays the basis of the standard method of fabrication of free-standing GaN, A1N and AlGaN substrates of the zinc blende type [19].…”

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Cubic and hexagonal InGaAsN dilute arsenides by unintentional homogeneous incorporation of As into InGaN

et al. 2012

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Arsenic alloying is observed for epitaxial layers nominally intended to be In 0 75 Ga 0 25N. Voids form beneath their interfaces with GaAs substrates, acting as sources of Ga + As out-diffusion into the growing epilayers. As a result, heteroepitaxial single-phase quaternary In^Gai-xAs-^Ni--,, films are formed with x ~ 0.55 and 0.05 < y < 0.10. While an undoped epilayer retains the wurtzite structure, a Mn-doped sample showed randomly spaced dopant segregations, which, together with a slightly higher As concentration, led to a transformation from the hexagonal to the twinned cubic phase.

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