Molecular beam epitaxy of HgCdTe

Wu, O. K.; DeLyon, T. J.; Rajavel, R. D.; Jensen, Joe E.

doi:10.1007/978-1-4613-1109-6_4

Cited by 8 publications

(5 citation statements)

References 106 publications

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“…Through the next decade a variety of metalorganic compounds were developed along with a number of reaction-chamber designs [65]. In the case of MBE, a specially designed Hg-source ovens was successfully designed to overcome the low sticking coefficient of Hg at the growth temperature [66]. The growth temperature is less than 200˚C for MBE but around 350˚C for MOCVD, making it more difficult to control the p-type doping in the MOCVD due to the formation of Hg vacancies at higher growth temperatures.…”

Section: Impact Of Epitaxial Growth On Development Of Hgcdte Detectorsmentioning

confidence: 99%

HgCdTe infrared detector material: history, status and outlook

2005

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This article reviews the history, the present status and possible future developments of HgCdTe ternary alloy for infrared (IR) detector applications. HgCdTe IR detectors have been intensively developed since the first synthesis of this material in 1958. This article summarizes the fundamental properties of this versatile narrow gap semiconductor, and relates the material properties to its successful applications as an IR photoconductive and photovoltaic detector material. An emphasis is put on key developments in the crystal growth and their influence on device evolution. Competitive technologies to HgCdTe ternary alloy are also presented.Recent advances of backside illuminated HgCdTe heterojunction photodiodes have enabled a third generation of multispectral instruments for remote sensing applications and have led to the practicality of multiband IR focal plane array technology. Finally, evaluation of HgCdTe for room temperature long wavelength IR applications is presented.

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Section: Impact Of Epitaxial Growth On Development Of Hgcdte Detectorsmentioning

confidence: 99%

HgCdTe infrared detector material: history, status and outlook

2005

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“…43 In the case of MBE, a specially designed Hg-source ovens was successfully designed to overcome the low sticking coefficient of Hg at the growth temperature. 44 The growth temperature is less than 200ºC for MBE but around 350ºC for MOCVD, making it more difficult to control the p-type doping in the MOCVD due to the formation of Hg vacancies at higher growth temperatures. At present, MBE is the dominant vapour phase method for HgCdTe.…”

Section: Impact Of Epitaxial Growth On Development Of Hgcdte Detectorsmentioning

confidence: 99%

HgCdTe infrared detectors: historical prospect

Rogalski

2003

SPIE Proceedings

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HgCdTe infrared (IR) detectors have been intensively developed since the first synthesis of this ternary alloy in 1958. The paper summarizes the fundamental properties of this versatile alloy, and relates the material properties to its successful applications as an IR photoconductive and photovoltaic detector material. An emphasize is put on key developments in the crystal growth and their influence on device evolution.Recent advances of backside illuminated HgCdTe heterojunction photodiodes have enabled third generation of multispectral instruments for remote sensing applications and have led to the practicality of multiband IR focal plane array technology.

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“…18 Up till now, 128x 128 and 256x256 LWIR arrays have been demonstrated. In October 1992 in U.S.A. a consortium was assembled and supported by DARPA to develop p-on-n double layer heterostructure HgCdTe photodiode FPAs and two color arraysY' The MBE technology gives HgCdTe more potential to produce high quality FPAs.…”

Section: Focal Plane Array Performancementioning

confidence: 99%

<title>Assessment of HgCdTe photodiodes and quantum well infrared photoconductors for long-wavelength focal plane arrays</title>

Rogalski

1999

SPIE Proceedings

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This paper compares the technical merits of two JR detector arrays technologies; photovoltaic HgCdTe and quantum well infrared photoconductors (QW1Ps). It is clearly shown that long wavelength infrared (LWIR) QWIP can not compete with HgCdTe photodiode as the single device especially at higher temperature operation (> 70 K) due to fundamental limitations associated with intersubband transitions. However, the advantage of HgCdTe is less distinct in temperature range below 50 K due to problems involved in a HgCdTe material.Even though that QWIP is a photoconductor, several its properties such as high impedance, fast response time, long integration time, and low power consumption, well comply requirements offabrication large focal plane arrays (PPM). Due to the high material quality at low temperature, QWIP has potential advantages over HgCdTe for very LWIR (VLWIR) FPA applications in terms ofthe array size, uniformity, yield and cost ofthe systems.

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Molecular beam epitaxy of HgCdTe

Cited by 8 publications

References 106 publications

HgCdTe infrared detector material: history, status and outlook

HgCdTe infrared detector material: history, status and outlook

HgCdTe infrared detectors: historical prospect

<title>Assessment of HgCdTe photodiodes and quantum well infrared photoconductors for long-wavelength focal plane arrays</title>

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