2003
DOI: 10.1063/1.1594286
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Molecular-beam epitaxy of the half-Heusler alloy NiMnSb on (In,Ga)As/InP (001)

Abstract: We report the growth of the half-Heusler alloy NiMnSb on InP ͑001͒ by molecular-beam epitaxy using a lattice-matched ͑In,Ga͒As buffer. High-resolution x-ray diffraction confirms a high crystalline quality. Spot-profile analysis low-energy electron diffraction measurements show well-defined surface reconstructions. The samples show the expected high Curie temperature and an uniaxial anisotropy.

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Cited by 64 publications
(40 citation statements)
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“…Recently, high quality films of NiMnSb alloys have been also grown [18,19,20], but they were found to be not half-metallic [21,22]; a maximum value of 58% for the spinpolarisation of NiMnSb was obtained by Soulen et al [21]. These polarisation values are consistent with a small perpendicular magnetoresistance measured for NiMnSb in a spin-valve structure [23], and a superconducting and a magnetoresistive tunnel junction [5].…”
Section: Introductionsupporting
confidence: 73%
“…Recently, high quality films of NiMnSb alloys have been also grown [18,19,20], but they were found to be not half-metallic [21,22]; a maximum value of 58% for the spinpolarisation of NiMnSb was obtained by Soulen et al [21]. These polarisation values are consistent with a small perpendicular magnetoresistance measured for NiMnSb in a spin-valve structure [23], and a superconducting and a magnetoresistive tunnel junction [5].…”
Section: Introductionsupporting
confidence: 73%
“…There are only a few reports on the deposition of high quality thin films at moderate temperatures ͑230-300°C͒ using methods of growth other than PLD. [7][8][9][10][11] The films exhibit saturation magnetization of 4 B / formula unit at 5 K consistent with the expected half-metallic behavior. In addition, the low coercive field of 2 Oe at room temperature and the low resistivity of 6 ⍀ cm at 5 K exhibited by these films constitute strong evidence for their good quality.…”
mentioning
confidence: 48%
“…The magnetic nanodisc (thickness 44 nm, diameter 1 µm) was patterned by standard e-beam lithography and ion-milling techniques from an extended film of NiMnSb grown by molecular-beam epitaxy on an InP(001) substrate 29 . A 50-nm-thick Si 3 N 4 cap layer was deposited on top of the disc for protection and a broadband coplanar microwave antenna (300-nm-thick Au) was subsequently evaporated on top of the patterned disc.…”
Section: Methodsmentioning
confidence: 99%