Molecular beam epitaxy of thermodynamically metastable GaInAsSb alloys for medium IR-range photodetectors

Семенов, А. Н.; Terent'ev, Ya. V.; Meltser, B. Ya.; Соловьев, В. А.; Popova, Tatiana; Nashchekin, A. V.; Андреев, И. А.; Kunitsyna, E. V.; Usikova, A. A.; Yakovlev, Yu. P.; Иванов, С. В.

doi:10.1134/s1063782610050222

Cited by 8 publications

(10 citation statements)

References 12 publications

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“…It has been shown that phase separation‐free In x Ga 1− x As y Sb 1− y with low indium (In) content (<0.26) can be prepared by molecular beam epitaxy (MBE) in the immiscibility gap by random alloy growth. However, growing In x Ga 1− x As y Sb 1− y with high In content in the immiscibility gap, which is needed for broken type‐II band alignment with InAs, remains a problem because of poor morphology and phase separation . Such growth issues hinder the application of high‐In‐content InGaAsSb and related quantum well, SL structure.…”

Section: Structural Parameters Of Inas/gasb and Inas(sb)/inxga1−xasysmentioning

confidence: 99%

Fabrication and Characterization of an InAs(Sb)/In_xGa_1−xAs_ySb_1−y Type‐II Superlattice

Fang

Gong

et al. 2019

Physica Rapid Research Ltrs

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Infrared optoelectronic devices based on type‐II superlattice structures of III–V semiconductor materials have progressed significantly during the past decades. Exploring and further expanding the material space is of great significance for the development of infrared applications. Herein, a superlattice structure based on InAs(Sb)/InxGa1−xAsySb1−y grown using a fractional monolayer alloy process to control the superlattice composition and structure is presented. High‐order satellite peaks with a narrow full width at half maximum (31 arcs) in the X‐ray diffraction patterns indicate the good crystal quality of the superlattices. Transmission electron microscopy (TEM) with energy‐dispersive spectroscopy (EDS) analysis validate the fractional monolayer alloy growth method. Photoluminescence measurements and k·p model calculations reveal the superior optical properties of the superlattice (sevenfold higher intensity than that of InAs/GaSb). In addition, the flexible control over the superlattice structure afforded by the method allows miniband engineering to cover the mid‐wavelength and long‐wavelength infrared regions. This work highlights the great potential of InAs(Sb)/InxGa1−xAsySb1−y superlattices in infrared optoelectronic devices.

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Section: Structural Parameters Of Inas/gasb and Inas(sb)/inxga1−xasysmentioning

confidence: 99%

Fabrication and Characterization of an InAs(Sb)/In_xGa_1−xAs_ySb_1−y Type‐II Superlattice

Fang

Gong

et al. 2019

Physica Rapid Research Ltrs

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“…In 1985, a double heterostructure Ga 0.84 In 0. 16 As 0.15 Sb 0.85 /Al 0.40 Ga 0.60 As 0.04 Sb 0.96 room temperature laser with a 2.2 µm emission wavelength was demonstrated for the first time. [29] Growing metastable GaInAsSb is challenging using LPE because LPE generally grows material near thermodynamic equilibrium.…”

Section: Device Studies (Lasers Detectors Light Emitting Diodes Anmentioning

confidence: 91%

“…A growth of 0.5 − 2 µm thick GaInAsSb lattice-matched to GaSb with indium concentration up to 20 % has been performed. [16] Alloys with 18 % indium show high quality material properties, but increasing indium concentration further decreases the morphological quality of material.…”

Section: Experimental Studies For Investigating the Immiscibility Regionmentioning

confidence: 99%

“…[14,15] Using lower temperatures and reduced V/III flux ratios, initial MBE experiments show extension of the onset of phase separation to x > 0.25. [16,17] High quality detectors employing thick Ga 1−x In x As y Sb 1−y layers on GaSb have been demonstrated [7,9,11] with cut-off wavelengths of 2.6 and 2.8 µm, corresponding to an x = 0.25 and 0.28, respectively. Ga 1−x In x As y Sb 1−y layers with indium concentrations as high as x = 0.4 to 0.5 have been successfully grown in thin (10 nm), highly strained quantum well layers grown at lower temperatures with high optical and structural quality to grow and fabricate 2 − 3 µm lasers.…”

mentioning

confidence: 99%

“…One study noted that phase separation is affected by thickness of the layers, with increase in layer thickness associated with decreasing stability of the quaternary. [16] LPE can grow stable alloys and achieve high growth rates, making it attractive for industrial purposes. However, growth conditions are close to thermodynamic equilibrium, so it is not an effective growth technique for thermodynamically metastable and unstable alloys.…”

mentioning

confidence: 99%

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Phase separation and defect formation in stable, metastable, and unstable GaInSaSb alloys for infrared applications

Yildirim¹

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Electrical and optical characterisation of InGaAsSb-based photodetectors for SWIR applications

Mamić,

Hanks,

Fletcher

et al. 2024

Semicond. Sci. Technol.

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The In(x)Ga(1−x)As(y)Sb(1−y) alloy was studied in epilayers and photodiodes grown lattice matched to GaSb across a comprehensive composition range, 0 ≤ x ≤ 0.3, as a promising technology to support the extended short-wave infrared region ∼ 1.7−3 μm. Low background carrier concentrations between 6 × 10^14 and 1 × 10^15 cm−3 were achieved in all samples, reducing with In fraction. Both the absorption coefficient and external quantum efficiency were found to increase with indium fraction, up to ∼ 10^4 cm−1 and 70% without an AR coating, respectively. Counter to the fundamental bandgap dependence, leakage current density initially reduced with the addition of low In and As fractions, before rising as the fractions increased and the bandgap reduced further. These properties resulted in specific detectivity reaching a maximum in the sample with x = 0.043, before decreasing towards higher alloy fractions. It is concluded that for moderate In fractions, the InGaAsSb alloy offers clear potential to improve on the disappointing material and photodiode properties of GaSb and support emerging SWIR sensing applications. However, development of fabrication and passivation technology is required to fully exploit this potential.

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Molecular beam epitaxy of thermodynamically metastable GaInAsSb alloys for medium IR-range photodetectors

Cited by 8 publications

References 12 publications

Fabrication and Characterization of an InAs(Sb)/In_xGa_1−xAs_ySb_1−y Type‐II Superlattice

Fabrication and Characterization of an InAs(Sb)/In_xGa_1−xAs_ySb_1−y Type‐II Superlattice

Phase separation and defect formation in stable, metastable, and unstable GaInSaSb alloys for infrared applications

Electrical and optical characterisation of InGaAsSb-based photodetectors for SWIR applications

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Molecular beam epitaxy of thermodynamically metastable GaInAsSb alloys for medium IR-range photodetectors

Cited by 8 publications

References 12 publications

Fabrication and Characterization of an InAs(Sb)/InxGa1−xAsySb1−y Type‐II Superlattice

Fabrication and Characterization of an InAs(Sb)/InxGa1−xAsySb1−y Type‐II Superlattice

Phase separation and defect formation in stable, metastable, and unstable GaInSaSb alloys for infrared applications

Electrical and optical characterisation of InGaAsSb-based photodetectors for SWIR applications

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Product

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Fabrication and Characterization of an InAs(Sb)/In_xGa_1−xAs_ySb_1−y Type‐II Superlattice

Fabrication and Characterization of an InAs(Sb)/In_xGa_1−xAs_ySb_1−y Type‐II Superlattice