The influence of the solution pH on H-terminated silicon surfaces in different electrolytes was investigated by in situ confocal Raman microscopy. This study provides Raman evidence that the initial oxidation of the hydrogenated silicon surface could occur by two paths. In the lower pH solution, the H-terminated silicon surface could be directly oxidized by the attack of OH Ϫ ; in the higher pH solution, the surface oxidation occurs in the second layer by the insertion of OH Ϫ into the back bond of Si-H ͑Si-Si͒, in which an intermediate species of uO 3 SiH could be found. In the study of the influence of electrolytes, it was found that F Ϫ ion could assist and accelerate the oxidation reaction, while the attack of OH Ϫ ion is essential to the initial oxidation processes. By taking advantage of Raman spectroscopy in the study of the low frequency region and analyzing the results from various samples, the assignment of the band located at about 629 cm Ϫ1 is discussed in detail and attributed to the vibrations of the silicon hydride and multiphonon structure.Wet chemical etching and oxidation of silicon are crucial to the semiconductor industry in the manufacturing of integrated circuits. An in situ investigation of the wet chemical etching and oxidation processes is highly desirable. Vibrational spectroscopies are important tools in characterizing the local bonding environments in semiconductors. There are a wealth of reports on the hydrogen bonding on the flat silicon surfaces of various crystal faces and on polycrystalline by using IR spectroscopy. 1-4 This technique is highly sensitive, and has provided detailed information of the surface configurations, such as silicon oxides and silicon hydrides. Furthermore, IR can identify covalently bonded hydrogen to be distributed among four different environments in the hydrogenated silicon: monohydride ͑ϵSi-H͒, dihydride (ϭSiH 2 ), trihydride (-SiH 3 ), and polymeric hydride (SiH 2 ) n . 1-4 However, there is presently no consensus about the details of the mechanism involved for etching or oxidation processes, and consequently, controversy has developed over the veracity of several proposed models. 4-7 Moreover, it is difficult for IR spectroscopy to provide the low frequency vibrational ͑Ͻ650 cm Ϫ1 ͒ information. Thus, to unravel the detailed mechanism for the above processes, a complementary technique, such as Raman spectroscopy, is highly desirable.Raman spectroscopy has some unique advantages over other spectroscopic techniques on the study of the silicon surface. First it can provide simultaneously the signal from the surface species and the silicon substrate. Second, it can detect vibrational bands in the low frequency region easily, which may be helpful to elucidate the mechanism of the etching and oxidation processes. Third, Raman spectroscopy can be conveniently used to monitor the reaction processes in situ in the aqueous solution because the Raman signal of water is very weak. Therefore, even a thick solution layer over the silicon surface will not severely i...