Studies have shown that low levels of potassium salt vapor contaminants drastically lower the oxidation resistance of ␣-SiC. In this study, reaction-bonded SiC and a composite SiC + TiB 2 suffered considerably more attack in environments containing potassium salt vapors than ␣-SiC. The kinetics were investigated by thermogravimetric analysis (TGA), while x-ray diffraction (XRD) and scanning electron microscopy (SEM) were used to characterize the scales. In an attempt to mitigate the degradation, a thin aluminum layer was applied by physical vapor deposition and then oxidized to alumina. When applied to ␣-SiC, the Al 2 O 3 layer reduced the corrosion rate where good overlayer coatings were achieved.