Monatomic 2D phase-change memory for precise neuromorphic computing

Jiao, Fangying; Chen, Bin; Ding, Keyuan; Li, Kunlong; Wang, Lei; Zeng, Xierong; Rao, Feng

doi:10.1016/j.apmt.2020.100641

Cited by 61 publications

(61 citation statements)

References 24 publications

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“…Although the phase transition of metals between amorphous and crystalline structure has been studied since the 1960s (12)(13)(14), single-element metals have not been viewed as tunable optical materials. Even electronically, it was only recently that amorphous states of elemental metals have been obtained by nanosecond electrical pulse melt quenching (15)(16)(17).…”

Section: Introductionmentioning

confidence: 99%

“…We show that monoatomic metal materials with tunable nonvolatile optical properties could benefit photonic applications based on active metallic nanostructures and miniaturized metallic memories. Crystalline Sb (c-Sb) is a single-element metal, and its amorphous phase has been obtained by careful deposition of thin film (14,34) or electrical pulse switching (15,17) with notably decreased electrical conductivity working as a semiconductor. During the metalinsulator transition of Sb (35), a substantial change of the free carrier absorption will result in a remarkable contrast in its optical loss.…”

Section: Introductionmentioning

confidence: 99%

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Antimony thin films demonstrate programmable optical nonlinearity

et al. 2021

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The use of metals of nanometer dimensions to enhance and manipulate light-matter interactions for emerging plasmonics-enabled nanophotonic and optoelectronic applications is an interesting yet not highly explored area of research beyond plasmonics. Even more importantly, the concept of an active metal that can undergo an optical nonvolatile transition has not been explored. Here, we demonstrate that antimony (Sb), a pure metal, is optically distinguishable between two programmable states as nanoscale thin films. We show that these states, corresponding to the crystalline and amorphous phases of the metal, are stable at room temperature. Crucially from an application standpoint, we demonstrate both its optoelectronic modulation capabilities and switching speed using single subpicosecond pulses. The simplicity of depositing a single metal portends its potential for use in any optoelectronic application where metallic conductors with an actively tunable state are important.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Antimony thin films demonstrate programmable optical nonlinearity

et al. 2021

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“…10 Confinement of antimony at the nanoscale also leads to a dramatic reduction of the structural relaxations responsible for the aging and the drift in time of the electrical conductivity in the amorphous phase 10 which could be further exploited for precise neuromorphic computing. 12 Switchable antimony films with thickness below 15 nm have also been proposed very recently for photonic applications. 13 Molecular dynamics (MD) simulations based on Density Functional Theory (DFT) revealed that the protocol used to generate the amorphous phase has strong effects on the crystallization kinetics of Sb.…”

Section: Introductionmentioning

confidence: 99%

Mechanism of amorphous phase stabilization in ultrathin films of monoatomic phase change material

2021

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“…The reduction in average charge for the Sb atoms and the decrease in Te concentration in Sb-rich alloys are expected to reduce the long-term mass transport. In the extreme case of pure Sb, [102][103][104][105] the absence of charge transfer should lead to much improved cycling performance.…”

Section: Resultsmentioning

confidence: 99%

Change in Structure of Amorphous Sb–Te Phase‐Change Materials as a Function of Stoichiometry

Ahmed

Wang

et al. 2021

Physica Rapid Research Ltrs

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The concept of phase-change memory using chalcogenide glasses dates back to the 1960s, as pioneered by Ovshinsky. [1] Starting from late 1980s, Ge-Sb-Te alloys along the GeTe-Sb 2 Te 3 pseudo-binary line (Group I), such as Ge 2 Sb 2 Te 5 , Ge 1 Sb 2 Te 4 and Ge 8 Sb 2 Te 11 , [2][3][4][5] doped Sb 2þx -Te alloys (Group II), such as Ag-, In-doped Sb 2þx Te (AIST), and alloyed Sb (Group III), [6][7][8][9][10] such as Ge 15 Sb 85 , were identified as suitable PCMs. These alloys were initially used for the rewritable optical data storage industry. [11] More recently, the Ge 1 Sb 2 Te 4 (GST) alloy has been used as the core material for electronic non-volatile memories, [12][13][14][15][16][17][18][19] e.g., 3D Xpoint. Moreover, PCMs can be used for neuro-inspired computing and in-memory computing, [20][21][22][23][24][25][26][27] and could also enable various nonvolatile photonic applications, including memory and computing devices, switches, and displays. [28][29][30][31][32][33][34][35][36] PCMs utilize the significant contrast in electrical resistivity or optical reflectivity between their crystalline and amorphous phase to encode data. [11] The switching between the two logic states is achieved by rapid and reversible phase transitions, namely, SET (crystallization) and RESET (melt-quenched amorphization). In addition to binary storage, multiple resistivity or reflectivity states can be obtained within a PCM cell via partial amorphization (iterative RESET) and crystallization (accumulative SET), enabling multilevel storage [37,38] and neuro-inspired computing applications. [39,40]

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Monatomic 2D phase-change memory for precise neuromorphic computing

Cited by 61 publications

References 24 publications

Antimony thin films demonstrate programmable optical nonlinearity

Antimony thin films demonstrate programmable optical nonlinearity

Mechanism of amorphous phase stabilization in ultrathin films of monoatomic phase change material

Change in Structure of Amorphous Sb–Te Phase‐Change Materials as a Function of Stoichiometry

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