Abstract:Process diagnostics and thickness metrology using in situ mass spectrometry for the chemical vapor deposition of W from H 2 / WF 6 Process sensing and metrology in gate oxide growth by rapid thermal chemical vapor deposition from SiH 4 and N 2 O The residual impurity gases in the atmospheric pressure processing equipment are becoming an important factor in the submicron ultralarge scale integrated industry. The present article includes three parts: ͑1͒ Ti-coated wafer for monitoring of trace O 2 , ͑2͒ O 2 sens… Show more
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