Monitoring of amorfization of the oxygen implanted layers in silicon wafers using photothermal radiometry and modulated free carrier absorption methods

Abstract

This paper presents experimental results that characterize implanted layers in silicon being the result of a high energy implantation of O ?6 ions. We propose a simple relation between attenuation of photothermal radiometry and/ or modulated free carrier absorption amplitudes, the implanted layer thickness and its optical absorption coefficient. The thickness of the implanted layers was determined from capacitance-voltage characteristics and computations with the TRIM program. The obtained results allowed to estimate changes of the optical absorption coefficient of the oxygen implanted layers indicating the amorfization of the layers.

$$\hbox {Au}^{2+}$$ Au 2 + -Implanted Regions in Silicon Visualized Using a Modulated Free-Carrier Absorption Method

“…For Ar 8+ -ion-implanted silicon, spectral characteristics of the PTR signal appear in [6] and for O 6+ -ion-implanted silicon those can be found in [7]. The observed decrease in the plasma component of the PTR signal was interpreted as a result of not only a strong decrease in carrier lifetime in the implanted layer but also a strong increase in the optical absorption coefficient of the implanted layer.…”

“…Results of investigations on the influence of Ar 8+ -and O 6+ -ion implantation in silicon on the PTR signal were presented in [5][6][7]. For Ar 8+ -ion-implanted silicon, spectral characteristics of the PTR signal appear in [6] and for O 6+ -ion-implanted silicon those can be found in [7].…”

Chosen Aspects Of Investigations Of Solar Cells With The Laser Beam Induced Current Technique

“…The spectra have been measured with the same spectroscopic experimental set-up which has been described elsewhere [29,30]. The amorphization level of silicon can be measured with the Photo-thermal Radiometry or Modulated Free Carrier Absorption methods described elsewhere [31,32]. The optical Uoc voltage spectra of the solar cell are presented in Fig.…”

Determination of Dissolved Iron Redox Species in Freshwater Sediment using DGT Technique Coupled to BDS

“…23,24 Intensity changes are correlated to the iron concentration bonded in the examined gel. 25 Presumably, the BDS technique would provide a highly sensitive chemical analysis, will be non-invasive and will retain optical and structural characteristics of the sample, thus, offering new possibilities for determination of iron species in natural water environments.…”