Monocrystalline InN Films Grown at High Rate by Organometallic Vapor Phase Epitaxy with Nitrogen Plasma Activation Supported by Gyrotron Radiation

Vodopyanov, A. V.; Buzynin, Yurii; Mansfeld, D. A.; Khrykin, O. I.; Drozdov, Yurii Nikolaevich; Yunin, P. A.; Luk’yanov, A. Yu.; Viktorov, M. E.; Golubev, S. V.; Shashkin, V. I.

doi:10.7567/jjap.52.110201

Jpn. J. Appl. Phys.

2013

DOI: 10.7567/jjap.52.110201

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Monocrystalline InN Films Grown at High Rate by Organometallic Vapor Phase Epitaxy with Nitrogen Plasma Activation Supported by Gyrotron Radiation

A. V. Vodopyanov

Yurii Buzynin

D. A. Mansfeld

et al.

Abstract: InN hexagonal monocrystalline films were grown on yttria-stabilized zirconia (YSZ) (111) and Al2O3(0001) by the organometallic vapor phase epitaxy method with nitrogen activation in the electron cyclotron resonance discharge, supported by gyrotron radiation. The film growth rate reached 10 µm/h. In this paper, we present data on the morphology, structure, and photoluminescence properties of the grown films.

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Cited by 3 publications

(2 citation statements)

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“…14,15) The possibility of low-temperature growth of a monocrystalline InN layer was demonstrated in Ref. 14.…”

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confidence: 99%

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Reactive nitrogen source based on ECR discharge sustained by 24 GHz radiation

Vodopyanov

Mansfeld

2015

Jpn. J. Appl. Phys.

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One of the key problems in the synthesis of group III nitrides is the development of an effective source of reactive nitrogen, which is necessary for incorporation into the crystal lattice. In this paper, we describe a source of reactive nitrogen based on ECR discharge plasma, which is sustained by technological gyrotron radiation. Measurements of atomic nitrogen flux were conducted by mass-spectrometric analysis of the products of the reaction of nitrogen monoxide with atomic nitrogen. The maximal atomic nitrogen flow was 5 ' 10 18 atoms/s (12 sccm). The atomic source was used to grow InN films.

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“…14,15) The possibility of low-temperature growth of a monocrystalline InN layer was demonstrated in Ref. 14.…”

mentioning

confidence: 99%

“…To determine the prospects of such a source of nitrogen indium nitride layers on different substrates, growth experiments were conducted. 14,15) The possibility of low-temperature growth of a monocrystalline InN layer was demonstrated in Ref. 14.…”

mentioning

confidence: 99%

Reactive nitrogen source based on ECR discharge sustained by 24 GHz radiation

Vodopyanov

Mansfeld

2015

Jpn. J. Appl. Phys.

Self Cite

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Measurement of electron temperature in a non-equilibrium discharge of atmospheric pressure supported by focused microwave radiation from a 24 GHz gyrotron

2019

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A microwave discharge of atmospheric pressure, maintained by focused CW radiation of a 24-GHz gyrotron in an argon flow in an external air atmosphere, was investigated. The electron temperature was determined by the current-voltage curve of a dual Langmuir probe placed in a plasma torch. The electron temperature was also estimated from plasma emission spectra within the framework of a coronal plasma model. The obtained values of the electron temperature coincide within the measurement accuracy. Also, the electron temperature is many times higher than the gas temperature. This fact allows us to stand of a significantly non-equilibrium atmospheric pressure plasma.

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InN-based heterojunction photodetector with extended infrared response

Hsu¹,

Kuo²,

Huang³

et al. 2015

Opt. Express

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The combination of ZnO, InN, and GaN epitaxial layers is explored to provide long wavelength photodetection capability in the GaN based materials. Growth temperature optimization was performed to obtain the best quality of InN epitaxial layer in the MOCVD system. The temperature dependent photoluminescence (PL) can provide the information about thermal quenching in the InN PL transitions and at least two non-radiative processes can be observed. X-ray diffraction and energy dispersive spectroscopy are applied to confirm the inclusion of indium and the formation of InN layer. The band alignment of such system shows a typical double heterojunction, which is preferred in optoelectronic device operation. The photodetector manufactured by this ZnO/GaN/InN layer can exhibit extended long-wavelength quantum efficiency, as high as 3.55%, and very strong photocurrent response under solar simulator illumination.

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Monocrystalline InN Films Grown at High Rate by Organometallic Vapor Phase Epitaxy with Nitrogen Plasma Activation Supported by Gyrotron Radiation

Cited by 3 publications

References 19 publications

Reactive nitrogen source based on ECR discharge sustained by 24 GHz radiation

Reactive nitrogen source based on ECR discharge sustained by 24 GHz radiation

Measurement of electron temperature in a non-equilibrium discharge of atmospheric pressure supported by focused microwave radiation from a 24 GHz gyrotron

InN-based heterojunction photodetector with extended infrared response

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