Monohydride phase on Ge(111) and amorphous germanium surfaces: a photoemission study

Steinmetz, D.; Ringeisen, F.; Bolmont, D.; Koulmann, J.J.

doi:10.1016/0039-6028(90)90526-e

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Germanium Deposition On H-si( 111)1

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1997

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Cited by 11 publications

(1 citation statement)

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“…These bonds were destroyed well below the monohydride desorption temperature (530 "C) on the Si( 111) surface (Greenlief, Gates, and Holbert 1989). The hydrogen would not be expected to remain on the Ge surface as the annealing temperature was above the monohydride desorption temperature (150 "C) on the Ge( 111) surface (Steinmetz et al 1990).…”

Section: Germanium Deposition On H-si( 111)mentioning

confidence: 99%

Atomic and electronic structures of novel silicon surface structures

Terry¹

1997

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The modification of silicon surfaces is presently of great interest to the semiconductor device community. Three distinct areas are the subject of inquiry: first, modification of the silicon electronic structure; second, passivation of the silicon surface; and third, functionalization of the silicon surface. It is believed that surface modification of these types will vii *.. Vlll has been at my side throughout my graduate career and my son, Casey Jeffrey, has really livened up the end. My parents, in-laws, and grandparents have provided support when the going got tough. I appreciate the help that was provided by my brothers and sister. I was greatly helped by the friendship of Ed Hanson and Matt Linford.

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Section: Germanium Deposition On H-si( 111)mentioning

confidence: 99%