Monolithic 3D Integrated Circuits

Device-level and module-level three-dimensional integrated circuits created using oblique processing

“…8 In its current incarnation, 3-D-IC architectures are divided into two distinct types: (1) 3-D-ICs created by stacking planar 2-D chips, 9 achieving interconnection in the vertical direction using through silicon vias (TSV); and (2) monolithic 3-D-ICs where epitaxial regrowth is performed on the wafer after fabrication of the first layer of devices, yielding a second layer of single crystal silicon for a second layer of silicon devices. 10 Both of these approaches yield ICs with current flow vertical to the wafer surface, and, in that sense are 3-dimensional, however, the transistors forming each integrated circuit all have their active regions oriented parallel to the wafer surface.…”

Extreme ultraviolet lithography and three dimensional integrated circuit—A review

“…[56][57][58][59] There is only one substrate, and all other layers are fabricated based on the substrate. After the devices on the substrate are fabricated, a second layer of silicon or other semiconductor film is grown on top of the first layer of devices by deposition or a thin layer may be attached using a method similar to that used in the silicon-on-insulator (SOI) process.…”

A high-speed, low-power 3D-SRAM architecture

“…We start with monolithic 3D integration, which enables accurate stacking of multiple active layers on a single wafer, each with a thickness of only few hundreds of nanometer [3]. In the resulting design, inter-layer vias are similar in size to typical inter-metal vias, giving this technology a very high density vertical interconnects.…”