Monolithic III–V on Silicon Plasmonic Nanolaser Structure for Optical Interconnects

Abstract

Monolithic integration of III–V semiconductor lasers with Si circuits can reduce cost and enhance performance for optical interconnects dramatically. We propose and investigate plasmonic III–V nanolasers as monolithically integrated light source on Si chips due to many advantages. First, these III–V plasmonic light sources can be directly grown on Si substrates free of crystallographic defects due to the submicron cavity footprint (250 nm × 250 nm) being smaller than the average defect free region size of the heteroepitaxial III–V material on Si. Secondly, the small lateral and vertical dimensions facilitate process co-integration with Si complementary metal-oxide-semiconductor (CMOS) in the front end of the line. Thirdly, combining with monolithically integrated CMOS circuits with low device capacitance and parasitic capacitance, the nano-cavity optoelectronic devices consume orders of magnitude less power than the conventional lasers and reduce the energy consumption. Fourthly, the modulation bandwidth of the plasmonic light-sources is enhanced to significantly higher than conventional lasers due to enhanced photon state density and transition rate. In addition, we show that these device performance are very robust after taking into account the surface recombination and variations in device fabrication processes.

Fundamental Scaling Laws in Nanophotonics

“…3a). The underlying explanation of the influence of high optical confinement leading to both high F p and β is an altered pump-efficiency enhancement mechanism2829. Compared to the lowest threshold from all three devices (FP, at l  = 0.6 μm, P th  = 10 −5  W) further scaling into the deep sub-micro regime results in a significant increase in the threshold power.…”

Numerical Drift-Diffusion Simulation of GaAs p-i-n and Schottky-Barrier Photodiodes for High-Speed AIIIBV On-Chip Optical Interconnections

“…The high performance of A III B V optoelectronic devices determines the development of the opposite concept of on-chip optical interconnecting [14][15][16]. This concept is aimed at the constructive and technological integration of silicon CMOS elements with the optical interconnections based on A III B V compounds.…”

Graphene-based solitons for spatial division multiplexed switching

“…The reason for this is that through the nonlinear Kerr effect, the high power in-plane field induces an anisotropic increase in the electric permittivity, causing self-confinement of the beam in the direction of propagation. We note that while the used beam intensity is high, 2.25´10 7 [V / m], it is below the field breakdown voltage of SiO2, 3´10 9 [V / m] [27]. We next investigate the interaction of two parallel Solitons propagating at a sub-wavelength distances to each other since we have high information-processing density application in mind ( Fig.…”

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Photonic waveguides are the basis for monolithic integrated photonic devices [6][7][8][9]. The shape and area of the waveguide cross-section defines the modes that are able to propagate in the waveguide, and the cross-section of the waveguide is a directionally dependent property of the waveguide [10][11][12].

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