2020
DOI: 10.1109/lmwc.2019.2954208
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Monolithic Integrated Antenna and Schottky Diode Multiplier for Free Space Millimeter-Wave Power Generation

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Cited by 6 publications
(6 citation statements)
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“…Some small signal parameters were estimated from experimental I/V characteristics (saturation current 10…20 fA, ideality factor 1.2…1.35, series resistance 30-50 ohm) with the zero-voltage capacitance of about 2 fF [9]. The Schottky diode cutoff frequency is around 1.5 THz, more than 10 times that of the upper limit of the W band (75 -110 GHz).…”
Section: Figure 2 Circuit Schematic Developed In Awr Microwave Officementioning
confidence: 99%
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“…Some small signal parameters were estimated from experimental I/V characteristics (saturation current 10…20 fA, ideality factor 1.2…1.35, series resistance 30-50 ohm) with the zero-voltage capacitance of about 2 fF [9]. The Schottky diode cutoff frequency is around 1.5 THz, more than 10 times that of the upper limit of the W band (75 -110 GHz).…”
Section: Figure 2 Circuit Schematic Developed In Awr Microwave Officementioning
confidence: 99%
“…For the fabrication of the frontend circuits (transmitter and receiver MMICs) the main steps of the fabrication process are described in [9]. The area of the receiver and multiplier chips is 1.4 × 3.5 mm 2 .…”
Section: Figure 3 Filter Layout Parameters and Comparison Between Sim...mentioning
confidence: 99%
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“…Apart from the well-known geometry, for multi-band operations, a compact leaves microstrip antenna patch is preferred. Other important features include a level head, lower exposure loss, and compatibility with microwave compact integrated circuits Bunea et al 2020, Zbitou et al 2006 [2,3]. In the electromagnetic spectrum, the X and Ku bands are independent and back-to-back.…”
Section: Introductionmentioning
confidence: 99%