Monolithic integration of common mode filters with electrostatic discharge protection on silicon/porous silicon hybrid substrate

Abstract

This work presents the integration of a common mode filter with ElectroStatic Discharge protection on a silicon/porous silicon hybrid substrate. The porous silicon fabrication was performed after the integration of active components. Thus, a fluoropolymer hard mask was used to protect the active devices during anodization and can be easily removed without damaging the porous silicon. Electrical characterization results have shown fully operational components and an increase of performance with the hybrid substrate regarding to p+-type silicon. Indeed, the cutoff frequency was increased by 8.8 GHz when porous silicon was fabricated below the bump pads and the inductors. This improvement is a promising result to extend the application of RF components for future communication standards with silicon technology.

Structural, Optical, and Thermal Analysis of n-Type Mesoporous Silicon Prepared by Electrochemical Etching

“…MePSi is a promising material in microelectronics, especially for monolithic active and passive devices and for gas sensing devices and microelectromechanical systems (MEMS). − For these applications, the electrical characteristics of MePSi layers are not the only physical values to be considered. The thermal conductivity of MePSi is a key parameter to evaluate its potentiality in a microelectronic device.…”

Porous Silicon in Microelectronics: From Academic Studies to Industry

“…Several research groups are still working in this area showing great improvement of passive device performances using thick PSi layers (5 to 13). Recently, at GREMAN, we demonstrated the improvement of RF functions using large area hybrid substrates on which filters and protection diodes were integrated (14).The same approach that used these hybrid Si/PSi substrates was also pointed out in the context of sensors and driving electronics integration by Barillaro and coworkers (15).…”

Monolithic integration of low-pass filters with ESD protections on p + silicon/porous silicon substrates

“…Indeed, the increase of performances of inductors, transmission lines and filters integrated on PS have been already reported [8][9][10]. In this context, the silicon/porous silicon mixed substrate becomes a serious alternative to silicon for the monolithic integration of RF circuits [11]. To reach this goal, PS regions are fabricated by local anodization of a silicon substrate.…”