This work presents the integration of a common mode filter with ElectroStatic Discharge protection on a silicon/porous silicon hybrid substrate. The porous silicon fabrication was performed after the integration of active components. Thus, a fluoropolymer hard mask was used to protect the active devices during anodization and can be easily removed without damaging the porous silicon. Electrical characterization results have shown fully operational components and an increase of performance with the hybrid substrate regarding to p+-type silicon. Indeed, the cutoff frequency was increased by 8.8 GHz when porous silicon was fabricated below the bump pads and the inductors. This improvement is a promising result to extend the application of RF components for future communication standards with silicon technology.

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