Monolithic integration of visible GaAs and near-infrared InGaAs for multicolor photodetectors by using high-throughput epitaxial lift-off toward high-resolution imaging systems

Abstract

In this study, multicolor photodetectors (PDs) fabricated by using bulk p-i-n-based visible GaAs and near-infrared InGaAs structures were monolithically integrated through a high-throughput epitaxial lift-off (ELO) process. To perform multicolor detection in integrated structures, GaAs PDs were transferred onto InGaAs PDs by using a Y2O3 bonding layer to simultaneously detect visible and near-infrared photons and minimize the optical loss. As a result, it was found that the GaAs top PD and InGaAs bottom PD were vertically aligned without tilting in x-ray diffraction (XRD) measurement. A negligible change in the dark currents for each PD was observed in comparison with reference PDs through electrical characterization. Furthermore, through optical measurements and simulation, photoresponses were clearly revealed in the visible and near-infrared band for the material’s absorption region, respectively. Finally, we demonstrated the simultaneous multicolor detection of the visible and near-infrared region,which implies individual access to each PD without mutual interference. These results are a significant improvement for the fabrication of multicolor PDs that enables the formation of bulk-based multicolor PDs on a single substrate with a high pixel density and nearly perfect vertical alignment for high-resolution multicolor imaging.

Layer-resolved release of epitaxial layers in III-V heterostructure via a buffer-free mechanical separation technique

“…To demonstrate the proposed layer-resolved mechanical separation technique, we first grew a III-V heterostructure composed of lattice-matched multiple InP/In 0.53 Ga 0.47 As epitaxial layers on an InP(100) wafer using a metalorganic chemical vapor deposition (MOCVD) system. This structure is one of the commonly used heterostructures for fabricating a near-infrared–sensitive p–i–n photodiode ( 42 , 43 ). The epitaxial layer structure is shown in Fig.…”

High-Detectivity UV–Vis–NIR Broadband Perovskite Photodetector Using a Mixed Pb–Sn Narrow-Band-Gap Absorber and a NiOx Electron Blocker

“…Broadband photodetectors capable of detecting both visible and near-infrared light are essential for many applications including consumer electronics, optical communication, ranging, security, and imaging. − In the past 10 years, low-cost solution-processed photodetectors with sensitivity to both visible and near-IR light have been developed using inorganic, organic, or a hybrid of organic and inorganic materials. − One such material that can be used for fabricating broadband photodetectors utilizing low-cost solution-processed techniques is halide perovskites. Halide perovskites possess interesting optoelectronic properties such as band gap tunability, high charge carrier mobility and lifetimes, and high broadband photosensitivity, making them excellent materials for visible and near-IR photodetectors. − …”

Layer-Scale and Chip-Scale Transfer Techniques for Functional Devices and Systems: A Review

“…While, in many cases, the growth substrate is preserved after the chip fabrication, there are many occasions where the semiconductor layers need to be very thin (from nm to µm scale) and transferred to a different substrate by removing the growth substrate [ 1 , 2 , 3 , 4 , 5 , 6 , 7 , 8 , 9 , 10 , 11 , 12 , 13 , 14 , 15 , 16 , 17 , 18 , 19 , 20 , 21 , 22 , 23 , 24 , 25 , 26 , 27 , 28 , 29 , 30 , 31 , 32 , 33 , 34 , 35 , 36 , 37 , 38 , 39 , 40 , 41 , 42 , 43 , 44 , 45 , 46 , 47 , 48 , 49 , 50 , …”