Monolithic integration via a universal damage enhanced quantum-well intermixing technique

InP-based photonic circuits: Comparison of monolithic integration techniques

“…Sputtering induced point defects [29]. During sputtering of a SiO 2 -layer point defects are created at the substrate surface, which can be diffused into the QWs with a thermal annealing step.…”

Selective modification of the band gaps of GaInNas/GaAs structures by quantum well intermixing techniques

“…The primary advantage associated with QWI is that it avoids complicated re-growth processes, and therefore is cost-effective and reliable. Indeed, QWI has been employed in various material systems for advanced optoelectonic devices and photonic integrated circuits (PICs) or optoelectronic integrated circuits (OEICs) [2,3].…”

Blue‐shift of phosphorous‐implanted InGaAs/InGaAsP MQW laser structures by two‐step anneals

“…Until now, there are several monolithic integration techniques that have been used in the past, such as the use of an offset QW active region [5], a butt-joint regrowth technique [6], a selective area growth (SAG) method [7] and a quantum-well intermixing (QWI) technique [3,4,8] to enable numerous components to be formed on the same chip with a common fabrication process. Selective area epitaxy as well as etching and regrowth techniques repeat the use of expensive epitaxial growth processes, thus reducing the prospects of low-cost volume production of PICs.…”