2010 Design, Automation &Amp; Test in Europe Conference &Amp; Exhibition (DATE 2010) 2010
DOI: 10.1109/date.2010.5457117
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Monolithically stackable hybrid FPGA

Abstract: -The paper introduces novel field programmable gate array (FPGA) circuits based on hybrid CMOS/resistive switching device (memristor) technology and explores several logic architectures. The novel FPGA structure is based on the combination of CMOL (Cmos + MOLecular scale devices) FPGA circuits and recent improvements and generalization of the CMOL concept to allow multilayer crossbar integration, compatibility with state-of-the-art foundries, and a wide range of available memristive crosspoint devices. Prelimi… Show more

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Cited by 14 publications
(10 citation statements)
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“…[17] for crossbar wire capacitance, f max ≈ p max F nano / (K C seg V 2 ) ≈ 100 MHz for F nano = 3 nm and F CMOS = 45 nm, and f max ≈ 1 GHz for F nano = 45 nm and F CMOS = 130 nm. The pattern matching throughputs per unit area, defined as N bits f max /A cell , corresponding to these two cases are 10 19 and 10 18 bits/s/cm 2 , respectively, which is much higher than any reported state-of-the art concepts.…”
Section: Discussion and Summarymentioning
confidence: 83%
See 3 more Smart Citations
“…[17] for crossbar wire capacitance, f max ≈ p max F nano / (K C seg V 2 ) ≈ 100 MHz for F nano = 3 nm and F CMOS = 45 nm, and f max ≈ 1 GHz for F nano = 45 nm and F CMOS = 130 nm. The pattern matching throughputs per unit area, defined as N bits f max /A cell , corresponding to these two cases are 10 19 and 10 18 bits/s/cm 2 , respectively, which is much higher than any reported state-of-the art concepts.…”
Section: Discussion and Summarymentioning
confidence: 83%
“…far beyond resolution of conventional optical lithography. Finally, fabrication process for some devices does not involve high temperatures opening possibilities for monolithical back-end integration of multiple layers on CMOS substrate [16,19]. Even if crossbar wires are defined with optical lithography so that F nano = F CMOS , the effective footprint of the TCAM cell could be still very small, i.e.…”
Section: Diode-like Stackable Tcam Memory Cellmentioning
confidence: 99%
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“…A typical nanohybrid circuit architecture developed by Likharev K K's group and named Cmos/nanowire/MOLecular hybrid (CMOL) [3] , has advantages to be memories [4][5] , field programmable gate array (FPGA) [6][7] and neuromorphic CrossNets [8] . However, the development of corresponding computer aided design (CAD) tools is far from demand.…”
Section: Introductionmentioning
confidence: 99%