Monte Carlo evaluation of spatial multiple-bit upset sensitivity to oblique incidence

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Using a Monte Carlo simulation tool of the multi-functional package for SEEs Analysis (MUFPSA), we study the temporal characteristics of ion-velocity susceptibility to the single event upset (SEU) effect, including the deposited energy, traversed time within the device, and profile of the current pulse. The results show that the averaged dposited energy decreases with the increase of the ion-velocity, and incident ions of 209Bi have a wider distribution of energy deposition than 132Xe at the same ion-velocity. Additionally, the traversed time presents an obvious decreasing trend with the increase of ion-velocity. Concurrently, ion-velocity certainly has an influence on the current pulse and then it presents a particular regularity. The detailed discussion is conducted to estimate the relevant linear energy transfer (LET) of incident ions and the SEU cross section of the testing device from experiment and simulation and to critically consider the metric of LET.

Section: Discussionsupporting

confidence: 90%

Simulation of temporal characteristics of ion-velocity susceptibility to single event upset effect

Geng¹,

Xi²,

Liu³

et al. 2014

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“…As the flux increases, the overall cross section of the unhardened SRAM deviates with no specific trend, but the MBUs of more than 3 bits increase as the ion flux increases. [26,27] At the flux higher than 10 3 ions/cm 2 •s, four or even higher bits errors appear that must result from more than one ion hitting the adjacent region during the same time interval.…”

Section: Device Structure Dependencymentioning

confidence: 99%

Investigation of flux dependent sensitivity on single event effect in memory devices

Luo¹,

Wang²,

Li³

et al. 2018

Heavy-ion flux is an important experimental parameter in the ground based single event tests. The flux impact on a single event effect in different memory devices is analyzed by using GEANT4 and TCAD simulation methods. The transient radial track profile depends not only on the linear energy transfer (LET) of the incident ion, but also on the mass and energy of the ion. For the ions with the energies at the Bragg peaks, the radial charge distribution is wider when the ion LET is larger. The results extracted from the GEANT4 and TCAD simulations, together with detailed analysis of the device structure, are presented to demonstrate phenomena observed in the flux related experiment. The analysis shows that the flux effect conclusions drawn from the experiment are intrinsically connected and all indicate the mechanism that the flux effect stems from multiple ion-induced pulses functioning together and relies exquisitely on the specific response of the device.

“…The MUFPSA tool is known to have the capability of quantifying the radial distribution of e − /h + pairs and spatial charge deposition. [20][21][22] Besides, based on δ -ray theory, the maximum range of δ ray and the incident ion's relative velocity also play an indispensable role in analyzing MBU characteristics. Therefore, to identify and explain SBUs, i.e., MBUs, induced by different ion tracks, it is reasonable and effective to simulate the radial distribution of ion tracks with MUFPSA tool.…”

Section: Investigating and Identifying The Influence Of Radial Distri...mentioning

confidence: 99%

“…In this work, we will first employ the simulation tool: multi-functional package for SEEs analysis (MUFPSA) simulation tool [20][21][22] to study the applicability of LET and explore its influence on MBU susceptibility. The MBU susceptibility of device induced by incident ions with the same LET will be further estimated and discussed.…”

Section: Introductionmentioning

confidence: 99%

Modeling and assessing the influence of linear energy transfer on multiple bit upset susceptibility

Geng

Liu

et al. 2013

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The influence of the metric of linear energy transfer (LET) on single event upset (SEU), particularly multiple bit upset (MBU) in a hypothetical 90-nm static random access memory (SRAM) is explored. To explain the odd point of higher LET incident ion but induced lower cross section in the curve of SEU cross section, MBUs induced by incident ions 132Xe and 209Bi with the same LET but different energies at oblique incidence are investigated using multi-functional package for single event effect analysis (MUFPSA). In addition, a comprehensive analytical model of the radial track structure is incorporated into MUFPSA, which is a complementation for assessing and interpreting MBU susceptibility of SRAM. The results show that (i) with the increase of incident angle, MBU multiplicity and probability each present an increasing trend; (ii) due to the higher ion relative velocity and longer range of δ electrons, higher energy ions trigger the MBU with less probability than lower energy ions.