A Multi Sub‐band Monte Carlo Simulator improved to efficiently include the Pauli Exclusion Principle is presented. It is used to study the transport in highly doped and ultra‐thin silicon film. Both steady state and transient regime of transport for silicon films under uniform driving field are investigated. Such approach aims to be carried out in a full device simulator to improve the modeling of the access region of nano‐Double Gate MOSFETs. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)