Monte Carlo simulation of hot-carrier transport in real semiconductor devices

Fischetti, Massimo V.; Laux, S.E.; Lee, W.

doi:10.1016/0038-1101(89)90302-x

Cited by 19 publications

(4 citation statements)

References 19 publications

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“…Here, however, the af describe particles which are not or-thogonalized ab initio. As a result, 2' = detlil (7) up to a phase factor. Since ( 7) is a determinant, it has the important property that its expansion contains only even numbers of the small off-diagonal overlaps, and to lowest non-trivial order…”

Section: (6)mentioning

confidence: 99%

Exchange effects in hot plasmas in semiconductors

Kriman

Joshi

Kann

et al. 1992

Semicond. Sci. Technol.

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We describe a many-body semiclassical approximation for simulating electronic motion. Semiclassical trajectories in this approach are determined from spin-dependent forces and effective mass corrections, which incorporate effects of Heisenberg uncertainty, and the Pauli repulsion and exchange interactions of fermion statistics. The method has been implemented jointly with an ensemble Monte Carlo treatment of phonon scattering, and numerical simulations performed for GaAs. Numerical results indicate that in the femtosecond-scale relaxation of laser-excited plasmas, quantum corrections to the electronic motion will become significant for excitation densities above 2 x 10'8cm-3.

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Section: (6)mentioning

confidence: 99%

Exchange effects in hot plasmas in semiconductors

Kriman

Joshi

Kann

et al. 1992

Semicond. Sci. Technol.

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“…With the increase of the carriers' energy the need for accurate, numerical energy band structure models arose [77][78][79][80]. For electrons in Si, the most thoroughly investigated case, a satisfactory understanding of the basic scattering mechanisms gives rise to a new ''standard model'' [81]. With the introduction of strain to enhance the performance of MOSFETs, however, the need for accurate full-band transport analysis has regained considerable interest [83,63,84].…”

Section: Monte Carlo Methods For Transport Calculationsmentioning

confidence: 99%

Current transport models for nanoscale semiconductor devices

Sverdlov

Ungersboeck

Kosina

et al. 2008

Materials Science and Engineering: R: Reports

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“…[1][2][3][4][5][6] Some of these methods are particularly well adapted towards treating the electron-plasmon interaction within a Monte Carlo simulation. These different approaches break down into two general categories, either a semiclassical direct solution of the Poisson equation coupled with the ensemble Monte Carlo simulator, 1 or an analytical, quantum mechanical formulation which is incorporated as a separate scattering mechanism within the Monte Carlo model.…”

Section: Introductionmentioning

confidence: 99%

Effect of inclusion of self-consistently determined electron temperature on the electron–plasmon interaction

Mansour¹,

Diff²,

Brennan³

1996

Journal of Applied Physics

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In this article, we present a comparison of three different formulations of the carrier-plasmon interaction in semiconductors that can be included within an ensemble Monte Carlo simulation. Two of the formulations, referred to here as the electron-field and electron-electron methods, can be considered as first-order quantum mechanical approaches in which the electron-plasmon interaction is treated as an additional scattering mechanism. The electron-field model formulation is corrected from previously published work following the approach of Popov, Solodkaya, and Bagaeva ͓Physica B 217, 118 ͑1996͔͒. The corrected electron-field model is compared to an improved, self-consistent electron-electron model and to the semiclassical method, by which the Poisson equation is solved self-consistently, for both steady-state bulk and transient transport. It is found that the corrected electron-field model, which is also formulated as self-consistent, and the new improved self-consistent electron-electron model predict nearly identical results in both steady and transient states. It is further found that the self-consistent quantum mechanical models compared to the semiclassical model do not yield precisely the same result, in agreement with previously published results. The addition of self-consistency to these models results in nearly equal plasmon occupation factors for both absorption and emission, leading to nearly equal absorption and emission rates at high carrier temperatures. Some caution must be exercised, however, in these results since a full temperature-dependent dielectric function has not been employed and it is possible that the quantum mechanical models may need some revision at high carrier temperatures. Nevertheless, the self-consistent quantum mechanical models predict the net average energy relaxation to be small, due to nearly equal absorption and emission rates, consistent with the semiclassical model.

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Monte Carlo simulation of hot-carrier transport in real semiconductor devices

Cited by 19 publications

References 19 publications

Exchange effects in hot plasmas in semiconductors

Exchange effects in hot plasmas in semiconductors

Current transport models for nanoscale semiconductor devices

Effect of inclusion of self-consistently determined electron temperature on the electron–plasmon interaction

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